Part Details for BSP315 by Siemens
Overview of BSP315 by Siemens
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for BSP315
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | 55 |
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$0.3860 / $0.5790 | Buy Now |
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Quest Components | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | 516 |
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$0.3860 / $0.9650 | Buy Now |
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Rochester Electronics | BSP315 - SIPMOS Small-Signal P-Channel MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 591 |
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$0.2722 / $0.3202 | Buy Now |
Part Details for BSP315
BSP315 CAD Models
BSP315 Part Data Attributes
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BSP315
Siemens
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Datasheet
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BSP315
Siemens
Power Field-Effect Transistor, 1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SIEMENS A G | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Pulsed Drain Current-Max (IDM) | 4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 185 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for BSP315
This table gives cross-reference parts and alternative options found for BSP315. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP315, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP315E6327 | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP315 vs BSP315E6327 |
| BSP315E-6327 | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | Siemens | BSP315 vs BSP315E-6327 |
| BSP315 | 1A, 50V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET | Rochester Electronics LLC | BSP315 vs BSP315 |
| BSP315E6327 | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP315 vs BSP315E6327 |
| BSP315E6433 | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP315 vs BSP315E6433 |