Datasheets
BSP316PH6327XTSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN

Part Details for BSP316PH6327XTSA1 by Infineon Technologies AG

Overview of BSP316PH6327XTSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for BSP316PH6327XTSA1

Part # Distributor Description Stock Price Buy
DISTI # 68AC4420
Newark Mosfet, p-Ch,-100V,-0.68A, sot-223-4,transistor Polarity-P Channel, continuous Drain Current Id-680Ma, drain Source Voltage Vds-100V, on Resistance Rdson-1.4Ohm, rdson Test Voltage Vgs-10V, threshold Voltage Vgs-1.5V, Rohs Compliant: Yes |Infineon BSP316PH6327XTSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2614
  • 1 $0.9090
  • 10 $0.7070
  • 25 $0.6190
  • 50 $0.5290
  • 100 $0.4410
  • 250 $0.4220
  • 500 $0.4030
  • 1,000 $0.3600
$0.3600 / $0.9090 Buy Now
DISTI # BSP316PH6327XTSA1
Avnet Americas Trans MOSFET P-CH -100V -0.68A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP316PH6327XTSA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Reel 2000
RFQ
Rochester Electronics BSP316P - SMALL SIGNAL MOSFETS RoHS: Compliant Status: Active Min Qty: 1 760
  • 1 $0.2885
  • 25 $0.2827
  • 100 $0.2712
  • 500 $0.2597
  • 1,000 $0.2452
$0.2452 / $0.2885 Buy Now
DISTI # BSP316PH6327XTSA1
TME Transistor: P-MOSFET, unipolar, -100V, -0.68A, 1.8W, PG-SOT223 Min Qty: 1 795
  • 1 $0.8450
  • 5 $0.3800
  • 25 $0.3420
  • 100 $0.3170
  • 250 $0.3020
  • 500 $0.2720
  • 1,000 $0.2540
$0.2540 / $0.8450 Buy Now
DISTI # C1S322000446229
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 2995
  • 5 $0.7260
  • 10 $0.5480
  • 50 $0.5220
  • 100 $0.3080
  • 500 $0.2990
$0.2990 / $0.7260 Buy Now
DISTI # SP001058754
EBV Elektronik Trans MOSFET P-CH -100V -0.68A 4-Pin SOT-223 T/R (Alt: SP001058754) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 0.68A 1.810V0.68A 1.8W 1.5V170uA 1 Piece P-Channel SOT-223-4 MOSFETs ROHS 60
  • 1 $0.3666
  • 10 $0.3572
  • 30 $0.3509
  • 100 $0.3446
$0.3446 / $0.3666 Buy Now
Win Source Electronics MOSFET P-CH 100V 0.68A SOT223 6822
  • 115 $0.4361
  • 250 $0.4080
  • 385 $0.3939
  • 550 $0.3658
  • 715 $0.3517
  • 890 $0.3377
$0.3377 / $0.4361 Buy Now

Part Details for BSP316PH6327XTSA1

BSP316PH6327XTSA1 CAD Models

BSP316PH6327XTSA1 Part Data Attributes

BSP316PH6327XTSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSP316PH6327XTSA1 Infineon Technologies AG Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT223-4-1, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT-223
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 10 Weeks
Samacsys Manufacturer Infineon
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.68 A
Drain-source On Resistance-Max 1.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1.8 W
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 2.72 A
Reference Standard AEC-Q101; IEC-61249-2-21; IEC-68-1
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
Turn-off Time-Max (toff) 139.9 ns
Turn-on Time-Max (ton) 18.2 ns

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