Part Details for BSP318SH6327XTSA1 by Infineon Technologies AG
Overview of BSP318SH6327XTSA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSP318SH6327XTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
68AC4421
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Newark | Mosfet, N-Ch, 60V, 2.6A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Infineon BSP318SH6327XTSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 311 |
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$0.5360 / $0.9420 | Buy Now |
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DISTI #
87AK5511
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Newark | Mosfet, N-Ch, 2.6A, Sot-223-4 Rohs Compliant: Yes |Infineon BSP318SH6327XTSA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3890 / $0.4340 | Buy Now |
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Chip 1 Exchange | INSTOCK | 46000 |
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RFQ | |
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Chip-Germany GmbH | RoHS: Compliant Min Qty: 1000 Date Code: 22 Container: Reel | 3809 |
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RFQ | |
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DISTI #
C1S322000898103
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Chip1Stop | Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 90 |
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$0.5710 / $0.8160 | Buy Now |
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CHIPMALL.COM LIMITED | Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting , ADAS , body control units , SMPS and motor control . | 1394 |
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$0.2899 | Buy Now |
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Win Source Electronics | MOSFET N-CH 60V 2.6A | 49800 |
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$0.3480 / $0.4500 | Buy Now |
Part Details for BSP318SH6327XTSA1
BSP318SH6327XTSA1 CAD Models
BSP318SH6327XTSA1 Part Data Attributes
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BSP318SH6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSP318SH6327XTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 10.4 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for BSP318SH6327XTSA1
This table gives cross-reference parts and alternative options found for BSP318SH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP318SH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFM014AL99Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SH6327XTSA1 vs IRFM014AL99Z |
| BSP318SH6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP318SH6327XTSA1 vs BSP318SH6327 |
| NDT014LL84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SH6327XTSA1 vs NDT014LL84Z |
| BUK78150-55,135 | 2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | BSP318SH6327XTSA1 vs BUK78150-55,135 |
| BUK78150-55115 | TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | BSP318SH6327XTSA1 vs BUK78150-55115 |
| BSP318SL6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP318SH6327XTSA1 vs BSP318SL6327 |
| IRFM014AS62Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SH6327XTSA1 vs IRFM014AS62Z |
| BSP318SL6327HTSA1 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP318SH6327XTSA1 vs BSP318SL6327HTSA1 |
| SP001058838 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | BSP318SH6327XTSA1 vs SP001058838 |
| BUK78150-55,115 | 2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | BSP318SH6327XTSA1 vs BUK78150-55,115 |