Part Details for BSP318SH6327XTSA1 by Infineon Technologies AG
Overview of BSP318SH6327XTSA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for BSP318SH6327XTSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSP318SH6327XTSA1CT-ND
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DigiKey | MOSFET N-CH 60V 2.6A SOT223-4 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2762 In Stock |
|
$0.3200 / $0.8500 | Buy Now |
DISTI #
BSP318SH6327XTSA1
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Avnet Americas | Trans MOSFET N-CH 60V 2.6A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP318SH6327XTSA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000 |
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$0.2880 / $0.3519 | Buy Now |
DISTI #
726-BSP318SH6327XTSA
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Mouser Electronics | MOSFET N-Ch 60V 2.6A SOT-223-3 RoHS: Compliant | 121525 |
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$0.3280 / $0.8500 | Buy Now |
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Future Electronics | Single N-Channel 60 V 90 mOhm 14 nC SIPMOS® Small Signal Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 150000Reel |
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$0.2950 / $0.3150 | Buy Now |
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Future Electronics | Single N-Channel 60 V 90 mOhm 14 nC SIPMOS® Small Signal Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.2950 / $0.3150 | Buy Now |
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Bristol Electronics | 93448 |
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RFQ | ||
DISTI #
BSP318SH6327XTSA1
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Avnet Americas | Trans MOSFET N-CH 60V 2.6A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP318SH6327XTSA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000 |
|
$0.2880 / $0.3519 | Buy Now |
DISTI #
BSP318SH6327XTSA1
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Avnet Americas | Trans MOSFET N-CH 60V 2.6A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP318SH6327XTSA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000 |
|
$0.2880 / $0.3519 | Buy Now |
DISTI #
SMC-BSP318SH6327XTSA1
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 93448 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 46000 |
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RFQ |
Part Details for BSP318SH6327XTSA1
BSP318SH6327XTSA1 CAD Models
BSP318SH6327XTSA1 Part Data Attributes
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BSP318SH6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSP318SH6327XTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.6 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 10.4 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Element Material | SILICON |
Alternate Parts for BSP318SH6327XTSA1
This table gives cross-reference parts and alternative options found for BSP318SH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP318SH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BUK78150-55115 | TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | BSP318SH6327XTSA1 vs BUK78150-55115 |
NDT014LD84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SH6327XTSA1 vs NDT014LD84Z |
BUK582-60AT/R | TRANSISTOR 2.5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power | NXP Semiconductors | BSP318SH6327XTSA1 vs BUK582-60AT/R |
BSP318SL6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP318SH6327XTSA1 vs BSP318SL6327 |
BUK78150-55,115 | 2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | BSP318SH6327XTSA1 vs BUK78150-55,115 |
BSP318SH6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP318SH6327XTSA1 vs BSP318SH6327 |
SP001058838 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | BSP318SH6327XTSA1 vs SP001058838 |
IRFM014AS62Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SH6327XTSA1 vs IRFM014AS62Z |
IRFM014AD84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SH6327XTSA1 vs IRFM014AD84Z |