Part Details for BSS127 by Galaxy Microelectronics
Results Overview of BSS127 by Galaxy Microelectronics
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- Part Data Attributes: (Available)
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BSS127 Information
BSS127 by Galaxy Microelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSS127
BSS127 CAD Models
BSS127 Part Data Attributes
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BSS127
Galaxy Microelectronics
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Datasheet
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BSS127
Galaxy Microelectronics
Power Field-Effect Transistor, 0.045A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | unknown | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 0.045 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Pulsed Drain Current-Max (IDM) | 0.16 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |