Part Details for BSZ042N04NSGATMA1 by Infineon Technologies AG
Overview of BSZ042N04NSGATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSZ042N04NSGATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Chip1Cloud | MOSFET N-CH 40V 40A TSDSON-8 | 42500 |
|
RFQ | |
DISTI #
1775494
|
Farnell | MOSFET, N CH, 40A, 40V, PG-TSDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 9 Weeks, 1 Days Container: Each | 0 |
|
$0.5870 / $1.6610 | Buy Now |
|
Perfect Parts Corporation | 26133 |
|
RFQ |
Part Details for BSZ042N04NSGATMA1
BSZ042N04NSGATMA1 CAD Models
BSZ042N04NSGATMA1 Part Data Attributes
|
BSZ042N04NSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSZ042N04NSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 40A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TSDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.0042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |