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Overview of BSZ0500NSI by Infineon Technologies AG
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for BSZ0500NSI by Infineon Technologies AG
Part Data Attributes for BSZ0500NSI by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Infineon
|
Avalanche Energy Rating (Eas)
|
90 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
30 V
|
Drain Current-Max (ID)
|
30 A
|
Drain-source On Resistance-Max
|
0.0019 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
S-PDSO-N3
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
SQUARE
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
160 A
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin (Sn)
|
Terminal Form
|
NO LEAD
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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