| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
BSZ0502NSIATMA1-ND
|
DigiKey | MOSFET N-CH 30V 22A/40A TSDSON Min Qty: 5000 Lead time: 20 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.5406 | Buy Now | |
|
DISTI #
BSZ0502NSIATMA1
|
Avnet Americas | Trans MOSFET N-CH 30V 22A 8SON - Tape and Reel (Alt: BSZ0502NSIATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | ||
|
DISTI #
726-BSZ0502NSIATMA1
|
Mouser Electronics | MOSFETs N RoHS: Compliant | 0 |
|
$0.5400 | Order Now | |
| Future Electronics | BSZ0502NSI series 30V 40A 2.8 mOhm N-Ch S3O8 OptiMOS™ 5 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$0.5300 | Buy Now | ||
|
DISTI #
SP001288154
|
EBV Elektronik | (Alt: SP001288154) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Package Description
|
TSDSON-8FL, 8 PIN
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
20 Weeks
|
|
Samacsys Manufacturer
|
Infineon
|
|
Avalanche Energy Rating (Eas)
|
30 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
22 A
|
|
Drain-source On Resistance-Max
|
0.0033 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
S-PDSO-N8
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
SQUARE
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
160 A
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Tin (Sn)
|
|
Terminal Form
|
NO LEAD
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC025N03MSGATMA1 | Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSZ0502NSIATMA1 vs BSC025N03MSGATMA1 |
| FDMS0308CS | 30V N-Channel PowerTrench® SyncFET™, 8LD,PQFN,JEDEC MO240 AA,5.0X6.0MM, CLIPBOND, 3000/TAPE REEL | Fairchild Semiconductor Corporation | BSZ0502NSIATMA1 vs FDMS0308CS |
| BSC028N03MSCGATMA1 | Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSZ0502NSIATMA1 vs BSC028N03MSCGATMA1 |
| NTMFS4983NFT3G | Single N-Channel Power MOSFET 30V, 106A, 2.1mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | onsemi | BSZ0502NSIATMA1 vs NTMFS4983NFT3G |
| NTMFS4983NFT1G | Single N-Channel Power MOSFET 30V, 106A, 2.1mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL | onsemi | BSZ0502NSIATMA1 vs NTMFS4983NFT1G |
