Datasheets
BSZ086P03NS3EG by:

Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

Part Details for BSZ086P03NS3EG by Infineon Technologies AG

Overview of BSZ086P03NS3EG by Infineon Technologies AG

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Part Details for BSZ086P03NS3EG

BSZ086P03NS3EG CAD Models

BSZ086P03NS3EG Part Data Attributes

BSZ086P03NS3EG Infineon Technologies AG
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BSZ086P03NS3EG Infineon Technologies AG Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, S-PDSO-N5
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature ESD PROTECTED
Avalanche Energy Rating (Eas) 105 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13.5 A
Drain-source On Resistance-Max 0.0134 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 69 W
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSZ086P03NS3EG

This table gives cross-reference parts and alternative options found for BSZ086P03NS3EG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ086P03NS3EG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSZ086P03NS3GATMA1 Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSZ086P03NS3EG vs BSZ086P03NS3GATMA1
BSZ086P03NS3G Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSZ086P03NS3EG vs BSZ086P03NS3G
Part Number Description Manufacturer Compare
FDD6637 P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ, 2500-REEL onsemi BSZ086P03NS3EG vs FDD6637
BSZ086P03NS3GATMA1 Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSZ086P03NS3EG vs BSZ086P03NS3GATMA1
BSZ086P03NS3G Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSZ086P03NS3EG vs BSZ086P03NS3G

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