|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Package Description
|
SMALL OUTLINE, S-PDSO-N5
|
|
Pin Count
|
8
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Infineon
|
|
Additional Feature
|
ESD PROTECTED
|
|
Avalanche Energy Rating (Eas)
|
105 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
13.5 A
|
|
Drain-source On Resistance-Max
|
0.0134 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
S-PDSO-N8
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
SQUARE
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
P-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
69 W
|
|
Pulsed Drain Current-Max (IDM)
|
160 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Tin (Sn)
|
|
Terminal Form
|
NO LEAD
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI7617DN-T1-GE3 | Power Field-Effect Transistor, 13.9A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | Vishay Intertechnologies | BSZ086P03NS3EG vs SI7617DN-T1-GE3 |
| FDD6637 | P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ, 2500-REEL | onsemi | BSZ086P03NS3EG vs FDD6637 |
