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Part Details for BSZ086P03NS3EGATMA1 by Infineon Technologies AG
Overview of BSZ086P03NS3EGATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSZ086P03NS3EGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50Y1832
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Newark | Mosfet, P-Ch, 30V, 40A, Tsdson, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon BSZ086P03NS3EGATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 31475 |
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$0.3480 / $0.9150 | Buy Now |
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DISTI #
87AK5513
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Newark | Mosfet, P-Ch, 40A, Tsdson-8 Rohs Compliant: Yes |Infineon BSZ086P03NS3EGATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3030 / $0.3050 | Buy Now |
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Rochester Electronics | BSZ086P03NS3E G - OptiMOS P3 Power-Transistor RoHS: Compliant Status: Active Min Qty: 1 | 35158 |
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$0.2748 / $0.3233 | Buy Now |
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DISTI #
C1S322001582962
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 10000 |
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$0.2500 / $0.5480 | Buy Now |
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DISTI #
SP000473016
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EBV Elektronik | Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: SP000473016) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET P-CH 30V 13.5A/40A TSDSON | 126000 |
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$0.6083 / $0.7856 | Buy Now |
Part Details for BSZ086P03NS3EGATMA1
BSZ086P03NS3EGATMA1 CAD Models
BSZ086P03NS3EGATMA1 Part Data Attributes
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BSZ086P03NS3EGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ086P03NS3EGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, S-PDSO-N5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ESD PROTECTED | |
| Avalanche Energy Rating (Eas) | 105 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13.5 A | |
| Drain-source On Resistance-Max | 0.0134 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |