Datasheets
BSZ086P03NS3EGATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

Part Details for BSZ086P03NS3EGATMA1 by Infineon Technologies AG

Results Overview of BSZ086P03NS3EGATMA1 by Infineon Technologies AG

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BSZ086P03NS3EGATMA1 Information

BSZ086P03NS3EGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSZ086P03NS3EGATMA1

Part # Distributor Description Stock Price Buy
DISTI # 50Y1832
Newark Mosfet, P-Ch, 30V, 40A, Tsdson, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon BSZ086P03NS3EGATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 30820
  • 1 $0.9360
  • 10 $0.7170
  • 25 $0.6430
  • 50 $0.5700
  • 100 $0.4960
  • 250 $0.4470
  • 500 $0.3970
  • 1,000 $0.3330
$0.3330 / $0.9360 Buy Now
DISTI # 87AK5513
Newark Mosfet, P-Ch, 40A, Tsdson-8 Rohs Compliant: Yes |Infineon BSZ086P03NS3EGATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $0.3180
  • 10,000 $0.3070
  • 20,000 $0.3030
$0.3030 / $0.3180 Buy Now
DISTI # BSZ086P03NS3EGATMA1
Avnet Americas Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ086P03NS3EGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 1 Days Container: Reel 0
  • 5,000 $0.2693
  • 10,000 $0.2225
  • 20,000 $0.2196
  • 30,000 $0.2170
  • 40,000 $0.2140
$0.2140 / $0.2693 Buy Now
Rochester Electronics OptiMOS P3 Power-Transistor RoHS: Compliant Status: Active Min Qty: 1 60422
  • 1 $0.3083
  • 25 $0.3021
  • 100 $0.2898
  • 500 $0.2775
  • 1,000 $0.2621
$0.2621 / $0.3083 Buy Now
DISTI # C1S322001582962
Chip One Stop MOSFET RoHS: Compliant Container: Cut Tape 10000
  • 5 $0.6320
  • 10 $0.4280
  • 50 $0.4230
  • 100 $0.2930
  • 200 $0.2840
  • 500 $0.2720
  • 5,000 $0.2680
  • 10,000 $0.2500
$0.2500 / $0.6320 Buy Now
DISTI # SP000473016
EBV Elektronik Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: SP000473016) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET P-CH 30V 13.5A/40A TSDSON 126000
  • 65 $0.7856
  • 140 $0.7350
  • 215 $0.7096
  • 305 $0.6589
  • 395 $0.6336
  • 495 $0.6083
$0.6083 / $0.7856 Buy Now

Part Details for BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1 CAD Models

BSZ086P03NS3EGATMA1 Part Data Attributes

BSZ086P03NS3EGATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSZ086P03NS3EGATMA1 Infineon Technologies AG Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TSDSON-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature ESD PROTECTED
Avalanche Energy Rating (Eas) 105 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13.5 A
Drain-source On Resistance-Max 0.0134 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSZ086P03NS3EGATMA1

This table gives cross-reference parts and alternative options found for BSZ086P03NS3EGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ086P03NS3EGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSZ086P03NS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 BSZ086P03NS3EGATMA1 vs BSZ086P03NS3G
SI7617DN-T1-GE3 Vishay Intertechnologies $0.4677 Power Field-Effect Transistor, 13.9A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 BSZ086P03NS3EGATMA1 vs SI7617DN-T1-GE3
FDD6637 onsemi $0.8406 P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ, DPAK-3 / TO-252-3, 2500-REEL BSZ086P03NS3EGATMA1 vs FDD6637

BSZ086P03NS3EGATMA1 Related Parts

BSZ086P03NS3EGATMA1 Frequently Asked Questions (FAQ)

  • Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.

  • The BSZ086P03NS3EGATMA1 requires a bias voltage of 5V to 12V, with a recommended operating voltage of 7V. Ensure the bias voltage is stable and within the recommended range for optimal performance.

  • The maximum allowed power dissipation for the BSZ086P03NS3EGATMA1 is 30W. Ensure the device is operated within this limit to prevent overheating and damage.

  • Handle the device with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. The device has an ESD rating of 2kV human body model (HBM) and 150V machine model (MM).

  • The recommended storage temperature range for the BSZ086P03NS3EGATMA1 is -40°C to 125°C. Store the device in a dry, cool place, away from direct sunlight and moisture.

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