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Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSZ086P03NS3EGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y1832
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Newark | Mosfet, P-Ch, 30V, 40A, Tsdson, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon BSZ086P03NS3EGATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 30820 |
|
$0.3330 / $0.9360 | Buy Now |
DISTI #
87AK5513
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Newark | Mosfet, P-Ch, 40A, Tsdson-8 Rohs Compliant: Yes |Infineon BSZ086P03NS3EGATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.3030 / $0.3180 | Buy Now |
DISTI #
BSZ086P03NS3EGATMA1
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Avnet Americas | Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ086P03NS3EGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
|
$0.2140 / $0.2693 | Buy Now |
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Rochester Electronics | OptiMOS P3 Power-Transistor RoHS: Compliant Status: Active Min Qty: 1 | 60422 |
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$0.2621 / $0.3083 | Buy Now |
DISTI #
C1S322001582962
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Chip One Stop | MOSFET RoHS: Compliant Container: Cut Tape | 10000 |
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$0.2500 / $0.6320 | Buy Now |
DISTI #
SP000473016
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EBV Elektronik | Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: SP000473016) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET P-CH 30V 13.5A/40A TSDSON | 126000 |
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$0.6083 / $0.7856 | Buy Now |
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BSZ086P03NS3EGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ086P03NS3EGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TSDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ESD PROTECTED | |
Avalanche Energy Rating (Eas) | 105 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 13.5 A | |
Drain-source On Resistance-Max | 0.0134 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSZ086P03NS3EGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ086P03NS3EGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSZ086P03NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSZ086P03NS3EGATMA1 vs BSZ086P03NS3G |
SI7617DN-T1-GE3 | Vishay Intertechnologies | $0.4677 | Power Field-Effect Transistor, 13.9A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | BSZ086P03NS3EGATMA1 vs SI7617DN-T1-GE3 |
FDD6637 | onsemi | $0.8406 | P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ, DPAK-3 / TO-252-3, 2500-REEL | BSZ086P03NS3EGATMA1 vs FDD6637 |