Datasheets
BTS115 by:

Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for BTS115 by Siemens

Overview of BTS115 by Siemens

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Applications Industrial Automation Automotive Motor control systems

Price & Stock for BTS115

Part # Distributor Description Stock Price Buy
ComSIT USA Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Stock EU - 1600
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for BTS115

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BTS115 Part Data Attributes

BTS115 Siemens
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BTS115 Siemens Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 12.5 A
Drain-source On Resistance-Max 0.125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 180 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 40 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 185 ns
Turn-on Time-Max (ton) 180 ns

Alternate Parts for BTS115

This table gives cross-reference parts and alternative options found for BTS115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BTS115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BTS115 Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG BTS115 vs BTS115
Part Number Description Manufacturer Compare
BTS113A 11.5A, 60V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BTS115 vs BTS113A
BTS121AE3045 Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN Infineon Technologies AG BTS115 vs BTS121AE3045
BTS121A-E3045 22A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN Siemens BTS115 vs BTS121A-E3045
BTS130E3045 Power Field-Effect Transistor, 27A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN Infineon Technologies AG BTS115 vs BTS130E3045
BTS113A Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Infineon Technologies AG BTS115 vs BTS113A
BTS115AE3045 Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN Siemens BTS115 vs BTS115AE3045
BTS121A Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Infineon Technologies AG BTS115 vs BTS121A
BTS113A Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BTS115 vs BTS113A
BTS120 Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BTS115 vs BTS120
BTS121A Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BTS115 vs BTS121A

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