BUK452-100A
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Overview of BUK452-100A by Philips Semiconductors

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

Part # Manufacturer Description Datasheet
100A474S10Y Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT
100A474S4Y8 Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT
100A484S4-5Y Renesas Electronics Corporation 4K X 4 ECL I/O SRAM

CAD Models for BUK452-100A by Philips Semiconductors
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Part Data Attributes for BUK452-100A by Philips Semiconductors

BUK452-100A
Philips Semiconductors
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
PHILIPS SEMICONDUCTORS
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
Drain Current-Max (ID)
11 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
60 W
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
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  1. BUK452-100A
    Philips Semiconductors
    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
    VS

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