Datasheets
BUK456-200A by:

TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power

Part Details for BUK456-200A by NXP Semiconductors

Overview of BUK456-200A by NXP Semiconductors

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for BUK456-200A

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BUK456-200A Part Data Attributes

BUK456-200A NXP Semiconductors
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BUK456-200A NXP Semiconductors TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code TO-220AB
Package Description PLASTIC, TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Pulsed Drain Current-Max (IDM) 76 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 255 ns
Turn-on Time-Max (ton) 90 ns

Alternate Parts for BUK456-200A

This table gives cross-reference parts and alternative options found for BUK456-200A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK456-200A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF641 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUK456-200A vs IRF641
YTF642 TRANSISTOR 16 A, 200 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power Toshiba America Electronic Components BUK456-200A vs YTF642
STP19NB20 19A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUK456-200A vs STP19NB20
IRF642-006 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUK456-200A vs IRF642-006
IRF642 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUK456-200A vs IRF642
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier BUK456-200A vs IRF641
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUK456-200A vs IRF641
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor BUK456-200A vs IRF641
IRF642 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUK456-200A vs IRF642
RFP15N15 Power Field-Effect Transistor, 15A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation BUK456-200A vs RFP15N15
Part Number Description Manufacturer Compare
IRF640S Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier BUK456-200A vs IRF640S
BUK455-200A TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power NXP Semiconductors BUK456-200A vs BUK455-200A
IRF640STRRPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier BUK456-200A vs IRF640STRRPBF
IRF640NSTRRPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 Infineon Technologies AG BUK456-200A vs IRF640NSTRRPBF
IRF641 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUK456-200A vs IRF641
IRF640S Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Vishay Intertechnologies BUK456-200A vs IRF640S
IRF640NSPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 Infineon Technologies AG BUK456-200A vs IRF640NSPBF
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor BUK456-200A vs IRF641
BUZ30A Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BUK456-200A vs BUZ30A
IRLW640A Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Samsung Semiconductor BUK456-200A vs IRLW640A

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