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BUK6213-30A - N-channel TrenchMOS intermediate level FET@en-us DPAK 3-Pin
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BUK6213-30A,118
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Avnet Americas | Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: BUK6213-30A,118) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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RFQ | |
DISTI #
BUK6213-30A,118
|
Avnet Americas | Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: BUK6213-30A,118) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
RFQ | |
DISTI #
BUK6213-30A,118
|
Avnet Americas | Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: BUK6213-30A,118) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
RFQ | |
DISTI #
BUK6213-30A,118
|
Avnet Silica | Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) DPAK T/R (Alt: BUK6213-30A,118) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 3 Weeks, 6 Days | Silica - 0 |
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Buy Now | |
DISTI #
4276043
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Farnell | BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT RoHS: Compliant Min Qty: 2500 Lead time: 3 Weeks, 1 Days Container: Each | 4990 |
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$0.2898 | Buy Now |
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BUK6213-30A,118
Nexperia
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Datasheet
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BUK6213-30A,118
Nexperia
BUK6213-30A - N-channel TrenchMOS intermediate level FET@en-us DPAK 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DPAK | |
Package Description | SC-63, DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT428 | |
Reach Compliance Code | not_compliant | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 267 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 55 A | |
Drain-source On Resistance-Max | 0.013 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 257 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |