Part Details for BUK652R6-40C,127 by NXP Semiconductors
Overview of BUK652R6-40C,127 by NXP Semiconductors
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Price & Stock for BUK652R6-40C,127
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BUK652R6-40C - 100A, 40V, 0.0026ohm, N-Channel Power MOSFET, TO-220AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 3041 |
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$0.8896 / $1.0500 | Buy Now |
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DISTI #
4279374
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Farnell | RoHS: Compliant Min Qty: 348 Container: Each | 0 |
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$1.4986 | Buy Now |
Part Details for BUK652R6-40C,127
BUK652R6-40C,127 CAD Models
BUK652R6-40C,127 Part Data Attributes
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BUK652R6-40C,127
NXP Semiconductors
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Datasheet
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BUK652R6-40C,127
NXP Semiconductors
N-channel TrenchMOS FET TO-220 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-220 | |
| Package Description | PLASTIC, SC-46, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT78A | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 637 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 262 W | |
| Pulsed Drain Current-Max (IDM) | 878 A | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |