Datasheets
BUK664R6-40C,118 by:

N-channel TrenchMOS intermediate level FET@en-us D2PAK 3-Pin

Part Details for BUK664R6-40C,118 by Nexperia

Overview of BUK664R6-40C,118 by Nexperia

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Price & Stock for BUK664R6-40C,118

Part # Distributor Description Stock Price Buy
DISTI # BUK664R6-40C,118
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK664R6-40C,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 0
RFQ
Rochester Electronics BUK664R6-40C - 80A, 40V, 0.0046ohm, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 5181
  • 1 $0.4436
  • 25 $0.4347
  • 100 $0.4170
  • 500 $0.3992
  • 1,000 $0.3771
$0.3771 / $0.4436 Buy Now
DISTI # BUK664R6-40C,118
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK664R6-40C,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 0
RFQ
DISTI # BUK664R6-40C,118
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK664R6-40C,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 0
RFQ
DISTI # 4279393
Farnell MISCELLANEOUS MOSFETS RoHS: Compliant Min Qty: 1600 Lead time: 3 Weeks, 1 Days Container: Each 5181
  • 1,600 $0.5143
$0.5143 Buy Now

Part Details for BUK664R6-40C,118

BUK664R6-40C,118 CAD Models

BUK664R6-40C,118 Part Data Attributes

BUK664R6-40C,118 Nexperia
Buy Now Datasheet
Compare Parts:
BUK664R6-40C,118 Nexperia N-channel TrenchMOS intermediate level FET@en-us D2PAK 3-Pin
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 226 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 511 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUK664R6-40C,118

This table gives cross-reference parts and alternative options found for BUK664R6-40C,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK664R6-40C,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK664R6-40C Power Field-Effect Transistor Nexperia BUK664R6-40C,118 vs BUK664R6-40C
Part Number Description Manufacturer Compare
IPB80N04S4L-04 Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG BUK664R6-40C,118 vs IPB80N04S4L-04
BUK663R2-40C,118 N-channel TrenchMOS intermediate level FET@en-us D2PAK 3-Pin Nexperia BUK664R6-40C,118 vs BUK663R2-40C,118
BUK663R2-40C Power Field-Effect Transistor Nexperia BUK664R6-40C,118 vs BUK663R2-40C
BUK664R6-40C Power Field-Effect Transistor Nexperia BUK664R6-40C,118 vs BUK664R6-40C
BUK663R5-30C,118 N-channel TrenchMOS intermediate level FET@en-us D2PAK 3-Pin Nexperia BUK664R6-40C,118 vs BUK663R5-30C,118
BUK663R5-30C Power Field-Effect Transistor Nexperia BUK664R6-40C,118 vs BUK663R5-30C
IPB80N04S4L04ATMA1 Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG BUK664R6-40C,118 vs IPB80N04S4L04ATMA1
FDB9409L_F085 Automotive N-Channel Logic Level MOSFET 40 V, 90 A, 2.9 mΩ, TO-263 2L (D2PAK), 800-TAPE REEL onsemi BUK664R6-40C,118 vs FDB9409L_F085

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