-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for BUK762R6-60E,118 by Nexperia
Overview of BUK762R6-60E,118 by Nexperia
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for BUK762R6-60E,118
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
53W8642
|
Newark | Mosfet, N-Ch, 60V, 120A, 324W, To-263, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Nexperia BUK762R6-60E,118 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.0800 | Buy Now |
|
DISTI #
1727-BUK762R6-60E,118CT-ND
|
DigiKey | MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4795 In Stock |
|
$1.5405 / $3.3000 | Buy Now |
|
DISTI #
BUK762R6-60E,118
|
Avnet Americas | Trans MOSFET N-CH 60V 120A T/R - Tape and Reel (Alt: BUK762R6-60E,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$1.4977 / $1.7875 | Buy Now |
|
DISTI #
771-BUK762R6-60E118
|
Mouser Electronics | MOSFET BUK762R6-60E/SOT404/D2PAK RoHS: Compliant | 1592 |
|
$1.5400 / $2.6300 | Buy Now |
|
|
Future Electronics | Trans MOSFET N-CH 60V 120A T/R - Tape and Reel (Alt BUK762R6-60E,118) RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks | 0 |
|
$1.5900 | Buy Now |
|
DISTI #
69218477
|
Verical | Trans MOSFET N-CH 60V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 4800 Package Multiple: 800 | Americas - 4800 |
|
$1.5360 / $1.5750 | Buy Now |
|
DISTI #
BUK762R6-60E,118
|
Avnet Silica | Trans MOSFET N-CH 60V 120A T/R (Alt: BUK762R6-60E,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
BUK762R6-60E,118
|
EBV Elektronik | Trans MOSFET N-CH 60V 120A T/R (Alt: BUK762R6-60E,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for BUK762R6-60E,118
BUK762R6-60E,118 CAD Models
BUK762R6-60E,118 Part Data Attributes
|
|
BUK762R6-60E,118
Nexperia
Buy Now
Datasheet
|
Compare Parts:
BUK762R6-60E,118
Nexperia
N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3/2 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT404 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 519 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 958 A | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |