Datasheets
BUK763R6-40C,118 by:

N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin

Part Details for BUK763R6-40C,118 by Nexperia

Overview of BUK763R6-40C,118 by Nexperia

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Price & Stock for BUK763R6-40C,118

Part # Distributor Description Stock Price Buy
DISTI # 73AH9791
Newark Mosfet, Aec-Q101, N-Ch, 40V, 100A, To-263 Rohs Compliant: Yes |Nexperia BUK763R6-40C,118 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
Buy Now
Rochester Electronics BUK763R6-40C - N-channel TrenchMOS standard level FET RoHS: Compliant Status: Obsolete Min Qty: 1 3896
  • 1 $1.1200
  • 25 $1.0900
  • 100 $1.0500
  • 500 $1.0000
  • 1,000 $0.9488
$0.9488 / $1.1200 Buy Now
CHIPMALL.COM LIMITED Package/EnclosureSOT404 fet typeN-Channel Operating temperature175 Gate voltage Vgs3V Drain-source voltage Vds40V 350
  • 1 $2.9254
  • 100 $2.1670
  • 400 $1.6669
  • 800 $1.4752
$1.4752 / $2.9254 Buy Now
DISTI # 3439657
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $2.6420
  • 10 $2.3411
  • 25 $1.9155
  • 50 $1.6072
  • 100 $1.3210
  • 500 $1.2550
$1.2550 / $2.6420 Buy Now
DISTI # 3439657
Farnell MOSFET, AECQ101, N-CH, 40V, 100A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape 0
  • 1 $0.5120
$0.5120 Buy Now
DISTI # 3439657RL
Farnell MOSFET, AECQ101, N-CH, 40V, 100A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Reel 0
  • 1 $0.5120
$0.5120 Buy Now

Part Details for BUK763R6-40C,118

BUK763R6-40C,118 CAD Models

BUK763R6-40C,118 Part Data Attributes

BUK763R6-40C,118 Nexperia
Buy Now Datasheet
Compare Parts:
BUK763R6-40C,118 Nexperia N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 292 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 668 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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