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BUK7K5R1-30E - Dual N-channel 30 V, 5.1 mΩ standard level MOSFET@en-us
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK6697
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Newark | Mosfet Rohs Compliant: Yes |Nexperia BUK7K5R1-30E,115 RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6100 / $0.7920 | Buy Now |
DISTI #
1727-7266-1-ND
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DigiKey | MOSFET 2N-CH 30V 40A LFPAK56D Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2056 In Stock |
|
$0.6228 / $2.4800 | Buy Now |
DISTI #
BUK7K5R1-30E,115
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin LFPAK-56D T/R - Tape and Reel (Alt: BUK7K5R1-30E,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Container: Reel | 0 |
|
$0.5793 | Buy Now |
DISTI #
771-BUK7K5R1-30E115
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Mouser Electronics | MOSFETs BUK7K5R1-30E/SOT1205/LFPAK56D RoHS: Compliant | 1222 |
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$0.6220 / $1.6300 | Buy Now |
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Future Electronics | ELITE PROGRAM PART - BUK7K5R1-30E/SOT1205/LFPAK56D RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Lead time: 6 Weeks Container: Reel | 0Reel |
|
$0.6100 / $0.6550 | Buy Now |
DISTI #
BUK7K5R1-30E,115
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Avnet Silica | Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin LFPAK-56D T/R (Alt: BUK7K5R1-30E,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 8 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
BUK7K5R1-30E,115
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EBV Elektronik | Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin LFPAK-56D T/R (Alt: BUK7K5R1-30E,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 8 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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BUK7K5R1-30E,115
Nexperia
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Datasheet
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BUK7K5R1-30E,115
Nexperia
BUK7K5R1-30E - Dual N-channel 30 V, 5.1 mΩ standard level MOSFET@en-us
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Package Description | LFPAK56D-8 | |
Pin Count | 8 | |
Manufacturer Package Code | SOT1205 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 228 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.0051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 340 A | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |