-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for BUK7Y18-55B,115 by Nexperia
Overview of BUK7Y18-55B,115 by Nexperia
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUK7Y18-55B,115
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Rochester Electronics | BUK7Y18-55B - 47.4A, 55V, 0.018ohm, N-Channel Power MOSFET, LFPAK RoHS: Compliant Status: Obsolete Min Qty: 1 | 1500 |
|
$0.3035 / $0.3571 | Buy Now |
|
|
CHIPMALL.COM LIMITED | Package/EnclosureSOT669 fet typeN-Channel Operating temperature-55C~175C Gate voltage Vgs20V Drain-source voltage Vds55V | 26520 |
|
$0.6959 / $1.9470 | Buy Now |
Part Details for BUK7Y18-55B,115
BUK7Y18-55B,115 CAD Models
BUK7Y18-55B,115 Part Data Attributes
|
|
BUK7Y18-55B,115
Nexperia
Buy Now
Datasheet
|
Compare Parts:
BUK7Y18-55B,115
Nexperia
N-channel TrenchMOS standard level FET@en-us SOIC 4-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | SOIC | |
| Package Description | LFPAK-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT669 | |
| Reach Compliance Code | not_compliant | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 77 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 47.4 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 189 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |