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BUK7Y29-40EX by:

BUK7Y29-40E - N-channel 40 V, 29 mΩ standard level MOSFET in LFPAK56@en-us SOIC 4-Pin

Part Details for BUK7Y29-40EX by Nexperia

Overview of BUK7Y29-40EX by Nexperia

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Price & Stock for BUK7Y29-40EX

Part # Distributor Description Stock Price Buy
DISTI # 90W4291
Newark Mosfet Transistor, N Channel, 26 A, 40 V, 0.0227 Ohm, 10 V, 3 V Rohs Compliant: Yes |Nexperia BUK7Y29-40EX Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $0.6760
  • 10 $0.6050
  • 100 $0.4130
  • 500 $0.3450
  • 1,000 $0.2930
  • 3,000 $0.2610
  • 10,500 $0.2290
$0.2290 / $0.6760 Buy Now
DISTI # 1727-1110-1-ND
DigiKey MOSFET N-CH 40V 26A LFPAK56 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.6300
  • 1,500 $0.2687
  • 3,000 $0.2394
  • 7,500 $0.2268
  • 10,500 $0.2099
  • 37,500 $0.2079
$0.2079 / $0.6300 Buy Now
DISTI # BUK7Y29-40EX
Avnet Americas Trans MOSFET N-CH 40V 26A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: BUK7Y29-40EX) RoHS: Compliant Min Qty: 4500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 4,500 $0.2461
  • 7,500 $0.2395
  • 12,000 $0.2328
  • 22,500 $0.2262
  • 45,000 $0.2195
  • 225,000 $0.2129
  • 450,000 $0.2062
$0.2062 / $0.2461 Buy Now
DISTI # 771-BUK7Y29-40EX
Mouser Electronics MOSFET BUK7Y29-40E/SOT669/LFPAK RoHS: Compliant 0
  • 1 $0.6200
  • 10 $0.5530
  • 100 $0.3770
  • 500 $0.3440
  • 1,500 $0.2820
  • 3,000 $0.2380
  • 9,000 $0.2200
  • 24,000 $0.2180
$0.2180 / $0.6200 Order Now
Future Electronics BUK7Y29 Series 40 V 29 mOhm N-Channel Standard Level MOSFET - LFPAK-56 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Container: Reel 0
Reel
  • 1,500 $0.2450
  • 3,000 $0.2400
  • 6,000 $0.2350
  • 7,500 $0.2350
  • 22,500 $0.2250
$0.2250 / $0.2450 Buy Now
Future Electronics BUK7Y29 Series 40 V 29 mOhm N-Channel Standard Level MOSFET - LFPAK-56 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 1500 Container: Reel 0
Reel
  • 1,500 $0.2450
  • 3,000 $0.2400
  • 6,000 $0.2350
  • 7,500 $0.2350
  • 22,500 $0.2250
$0.2250 / $0.2450 Buy Now
DISTI # BUK7Y29-40EX
TTI MOSFET BUK7Y29-40E/SOT669/LFPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 4500 Package Multiple: 1500 Container: Reel Americas - 0
  • 4,500 $0.2620
  • 6,000 $0.2420
  • 9,000 $0.2370
  • 15,000 $0.2320
  • 22,500 $0.2280
  • 37,500 $0.2230
  • 150,000 $0.2190
$0.2190 / $0.2620 Buy Now
DISTI # BUK7Y29-40EX
Avnet Americas Trans MOSFET N-CH 40V 26A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: BUK7Y29-40EX) RoHS: Compliant Min Qty: 4500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 4,500 $0.2461
  • 7,500 $0.2395
  • 12,000 $0.2328
  • 22,500 $0.2262
  • 45,000 $0.2195
  • 225,000 $0.2129
  • 450,000 $0.2062
$0.2062 / $0.2461 Buy Now
DISTI # BUK7Y29-40EX
TME Transistor: N-MOSFET, unipolar, 40V, 18A, Idm: 102A, 37W Min Qty: 1 0
  • 1 $0.7900
  • 5 $0.5030
  • 25 $0.4520
  • 100 $0.4000
  • 500 $0.3350
$0.3350 / $0.7900 RFQ
DISTI # 2319904
element14 Asia-Pacific MOSFET, N-CH, 40V, 26A, LFPAK RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $0.6864
  • 10 $0.6141
  • 100 $0.4193
  • 500 $0.3506
  • 1,000 $0.2510
  • 5,000 $0.2414
$0.2414 / $0.6864 Buy Now
DISTI # 2319904
Farnell MOSFET, N-CH, 40V, 26A, LFPAK RoHS: Compliant Min Qty: 1 Lead time: 14 Weeks, 1 Days Container: Each 0
  • 1 $0.7452
  • 10 $0.6425
  • 100 $0.3970
  • 500 $0.3331
  • 1,000 $0.2380
  • 5,000 $0.2279
$0.2279 / $0.7452 Buy Now

Part Details for BUK7Y29-40EX

BUK7Y29-40EX Part Data Attributes:

BUK7Y29-40EX Nexperia
Buy Now Datasheet
Compare Parts:
BUK7Y29-40EX Nexperia BUK7Y29-40E - N-channel 40 V, 29 mΩ standard level MOSFET in LFPAK56@en-us SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description SOP-8, 4 PIN
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Nexperia
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 8.7 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 26 A
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 102 A
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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