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BUK9214-30A - N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
SCS-200LB | Coilcraft Inc | 30A CURRENT SENSE TRANSFORMER, | |
DC2334A | Analog Devices | LTC2947 Demo Board - 30A Energ | |
DC1043A-B | Analog Devices | LTM4601 Demo Board - 30A Paral |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73AH9820
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Newark | Mosfet, Aec-Q101, N-Ch, 30V, 63A, To-252 Rohs Compliant: Yes |Nexperia BUK9214-30A,118 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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BUK9214-30A,118
Nexperia
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Datasheet
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BUK9214-30A,118
Nexperia
BUK9214-30A - N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DPAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT428 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-02-01 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 63 A | |
Drain-source On Resistance-Max | 0.0155 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 253 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |