Part Details for BUK9535-55 by NXP Semiconductors
Overview of BUK9535-55 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BUK9535-55
BUK9535-55 CAD Models
BUK9535-55 Part Data Attributes
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BUK9535-55
NXP Semiconductors
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Datasheet
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BUK9535-55
NXP Semiconductors
TRANSISTOR 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 85 W | |
| Power Dissipation-Max (Abs) | 85 W | |
| Pulsed Drain Current-Max (IDM) | 136 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 145 ns | |
| Turn-on Time-Max (ton) | 131 ns |
Alternate Parts for BUK9535-55
This table gives cross-reference parts and alternative options found for BUK9535-55. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK9535-55, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT4040BN | Power Field-Effect Transistor, 16A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Advanced Power Technology | BUK9535-55 vs APT4040BN |
| PHP44N06T | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | BUK9535-55 vs PHP44N06T |
| PHP193NQ06T,127 | PHP193NQ06T | NXP Semiconductors | BUK9535-55 vs PHP193NQ06T,127 |
| BUK9504-40A,127 | N-channel TrenchMOS logic level FET@en-us TO-220 3-Pin | Nexperia | BUK9535-55 vs BUK9504-40A,127 |
| BUK545-60H | TRANSISTOR 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | BUK9535-55 vs BUK545-60H |
| PHP65N06LT127 | TRANSISTOR 63 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | BUK9535-55 vs PHP65N06LT127 |
| IRF9642 | Power Field-Effect Transistor, 9A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | BUK9535-55 vs IRF9642 |
| PHP42N03LT | TRANSISTOR 42 A, 30 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | BUK9535-55 vs PHP42N03LT |
| APT5025BN | Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | BUK9535-55 vs APT5025BN |
| PHW13N40E | TRANSISTOR 13.7 A, 400 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN, FET General Purpose Power | NXP Semiconductors | BUK9535-55 vs PHW13N40E |