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N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
MC100ELT24DG | Rochester Electronics LLC | MC100ELT24 - TTL to ECL Translator, 1 Func, Complementary Output | |
MC100ELT24DTG | Rochester Electronics LLC | TTL to ECL Translator, Complementary Output, ECL, TSSOP 8 | |
CST4835-100EC | Coilcraft Inc | Current Sense Transformer |
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
28AK6792
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Newark | Mosfet Rohs Compliant: Yes |Nexperia BUK9615-100E,118 RoHS: Compliant Min Qty: 4800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.9340 | Buy Now |
|
Future Electronics | RoHS: Exempt pbFree: No Min Qty: 4800 Package Multiple: 800 Lead time: 52 Weeks | 0 |
|
$0.9760 | Buy Now |
|
Rochester Electronics | BUK9615-100E - 66A, 100V, 0.015ohm, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 2400 |
|
$0.8273 / $0.9733 | Buy Now |
DISTI #
BUK9615-100E.118
|
TME | Transistor: N-MOSFET, unipolar, 100V, 47A, Idm: 266A, 182W Min Qty: 1 | 0 |
|
$1.3200 / $1.9700 | RFQ |
|
CHIPMALL.COM LIMITED | Package/EnclosureSOT404 fet typeN-Channel Operating temperature175 Gate voltage Vgs1.7V Drain-source voltage Vds100V | 400 |
|
$0.9986 / $1.7339 | Buy Now |
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BUK9615-100E,118
Nexperia
Buy Now
Datasheet
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BUK9615-100E,118
Nexperia
N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | D2PAK | |
Package Description | D2PAK-3/2 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 132 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 66 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 266 A | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |