Datasheets
BUK963R3-60E,118 by:

N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin

Part Details for BUK963R3-60E,118 by Nexperia

Overview of BUK963R3-60E,118 by Nexperia

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for BUK963R3-60E,118

Part # Distributor Description Stock Price Buy
DISTI # 1727-1099-1-ND
DigiKey MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4780
In Stock
  • 1 $2.9800
  • 10 $2.5010
  • 100 $2.0229
  • 800 $1.7981
  • 1,600 $1.5396
  • 2,400 $1.4497
  • 5,600 $1.3909
$1.3909 / $2.9800 Buy Now
DISTI # BUK963R3-60E,118
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK963R3-60E,118) RoHS: Not Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.6139
  • 6,400 $1.5703
  • 11,200 $1.5267
  • 24,000 $1.4831
  • 48,000 $1.4395
  • 240,000 $1.3958
  • 480,000 $1.3522
$1.3522 / $1.6139 Buy Now
DISTI # 771-BUK963R3-60E118
Mouser Electronics MOSFET BUK963R3-60E/SOT404/D2PAK RoHS: Compliant 2787
  • 1 $2.9800
  • 10 $2.5100
  • 25 $2.5000
  • 100 $2.0300
  • 500 $2.0200
  • 800 $1.5300
  • 2,400 $1.4400
  • 4,800 $1.3900
$1.3900 / $2.9800 Buy Now
Future Electronics N-Channel 60 V 3 mOhm 95 nC SMT TrenchMOS Logic Level FET - TO-263 RoHS: Exempt pbFree: No Min Qty: 4800 Package Multiple: 800 0
  • 4,800 $1.4400
$1.4400 Buy Now
DISTI # BUK963R3-60E,118
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK963R3-60E,118) RoHS: Not Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.6139
  • 6,400 $1.5703
  • 11,200 $1.5267
  • 24,000 $1.4831
  • 48,000 $1.4395
  • 240,000 $1.3958
  • 480,000 $1.3522
$1.3522 / $1.6139 Buy Now
DISTI # BUK963R3-60E,118
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK963R3-60E,118) RoHS: Not Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.6139
  • 6,400 $1.5703
  • 11,200 $1.5267
  • 24,000 $1.4831
  • 48,000 $1.4395
  • 240,000 $1.3958
  • 480,000 $1.3522
$1.3522 / $1.6139 Buy Now
DISTI # BUK963R3-60E,118
Avnet Asia Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: BUK963R3-60E,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days 0
  • 4,800 $1.4349
  • 9,600 $1.4162
  • 14,400 $1.3981
  • 24,000 $1.3804
  • 48,000 $1.3463
  • 120,000 $1.3139
  • 240,000 $1.2829
$1.2829 / $1.4349 Buy Now
DISTI # BUK963R3-60E,118
Avnet Silica Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: BUK963R3-60E,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 4 Days Silica - 0
Buy Now
CHIPMALL.COM LIMITED Package/EnclosureSOT404 fet typeN-Channel Operating temperature175 Gate voltage Vgs1.7V Drain-source voltage Vds60V 4800
  • 210 $2.6662
  • 400 $2.2595
  • 800 $2.0729
$2.0729 / $2.6662 Buy Now
DISTI # BUK963R3-60E,118
EBV Elektronik Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: BUK963R3-60E,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 2254201
Farnell MOSFET, N-CH, 60V, 120A, D2PAK RoHS: Compliant Min Qty: 4800 Lead time: 17 Weeks, 1 Days Container: Each 0
  • 4,800 $1.4572
$1.4572 Buy Now

Part Details for BUK963R3-60E,118

BUK963R3-60E,118 CAD Models

BUK963R3-60E,118 Part Data Attributes

BUK963R3-60E,118 Nexperia
Buy Now Datasheet
Compare Parts:
BUK963R3-60E,118 Nexperia N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code D2PAK
Package Description D2PAK-3/2
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
Samacsys Manufacturer Nexperia
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 404 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 803 A
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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