| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
28AK6798
|
Newark | Mosfet Rohs Compliant: Yes |Nexperia BUK964R2-80E,118 RoHS: Compliant Min Qty: 4800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.4300 / $1.7500 | Buy Now | |
|
DISTI #
1727-1896-1-ND
|
DigiKey | MOSFET N-CH 80V 120A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5054 In Stock |
|
$1.6951 / $3.2900 | Buy Now | |
|
DISTI #
BUK964R2-80E,118
|
Avnet Americas | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: BUK964R2-80E,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Container: Reel | 0 |
|
$1.5454 | Buy Now | |
|
DISTI #
771-BUK964R2-80E118
|
Mouser Electronics | MOSFETs BUK964R2-80E/SOT404/D2PAK RoHS: Compliant | 1049 |
|
$1.6900 / $2.5500 | Buy Now | |
| Future Electronics | MOSFET N-Chan 80V 120A RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks | 0 |
|
$1.7500 | Buy Now | ||
|
DISTI #
BUK964R2-80E,118
|
Avnet Silica | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: BUK964R2-80E,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days | Silica - 0 |
|
Buy Now | ||
|
DISTI #
BUK964R2-80E,118
|
EBV Elektronik | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: BUK964R2-80E,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
|
|
|
|---|---|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
NEXPERIA
|
|
Part Package Code
|
D2PAK
|
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
|
Pin Count
|
3
|
|
Manufacturer Package Code
|
SOT404
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Nexperia
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
485 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
80 V
|
|
Drain Current-Max (ID)
|
120 A
|
|
Drain-source On Resistance-Max
|
0.0042 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
245
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
740 A
|
|
Reference Standard
|
AEC-Q101; IEC-60134
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
