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N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK6800
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Newark | Mosfet Rohs Compliant: Yes |Nexperia BUK964R8-60E,118 Min Qty: 4800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.9600 / $1.2100 | Buy Now |
DISTI #
1727-7261-1-ND
|
DigiKey | MOSFET N-CH 60V 100A D2PAK Min Qty: 1 Lead time: 52 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4734 In Stock |
|
$1.1689 / $2.6900 | Buy Now |
DISTI #
BUK964R8-60E.118
|
TME | Transistor: N-MOSFET, unipolar, 60V, 100A, Idm: 596A, 234W Min Qty: 1 | 0 |
|
$1.4900 / $2.2400 | RFQ |
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BUK964R8-60E,118
Nexperia
Buy Now
Datasheet
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BUK964R8-60E,118
Nexperia
N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 273 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0048 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 596 A | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |