Part Details for BUK9E3R2-40E,127 by NXP Semiconductors
Overview of BUK9E3R2-40E,127 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for BUK9E3R2-40E,127
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BUK9E3R2-40E - 100A, 40V, 0.0032ohm, N-Channel Power MOSFET, TO-262AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 300 |
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$0.6673 / $0.7850 | Buy Now |
Part Details for BUK9E3R2-40E,127
BUK9E3R2-40E,127 CAD Models
BUK9E3R2-40E,127 Part Data Attributes
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BUK9E3R2-40E,127
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
BUK9E3R2-40E,127
NXP Semiconductors
N-channel TrenchMOS logic level FET TO-262 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-262 | |
| Package Description | PLASTIC, TO-262, I2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT226 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 419 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 234 W | |
| Pulsed Drain Current-Max (IDM) | 781 A | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BUK9E3R2-40E,127
This table gives cross-reference parts and alternative options found for BUK9E3R2-40E,127. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK9E3R2-40E,127, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD90N04S3-04 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | BUK9E3R2-40E,127 vs IPD90N04S3-04 |
| TK3R1E04PL | Power Field-Effect Transistor | Toshiba America Electronic Components | BUK9E3R2-40E,127 vs TK3R1E04PL |
| IPB100N04S204ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | BUK9E3R2-40E,127 vs IPB100N04S204ATMA1 |
| IPB100N04S3-03 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | BUK9E3R2-40E,127 vs IPB100N04S3-03 |
| IPD90N04S403ATMA1 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | BUK9E3R2-40E,127 vs IPD90N04S403ATMA1 |
| IPD90N04S4-03 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BUK9E3R2-40E,127 vs IPD90N04S4-03 |
| TK100F04K3 | TRANSISTOR 100 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10W1A, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | BUK9E3R2-40E,127 vs TK100F04K3 |
| IPB100N04S2-04 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | BUK9E3R2-40E,127 vs IPB100N04S2-04 |
| IPC100N04S52R8ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN | Infineon Technologies AG | BUK9E3R2-40E,127 vs IPC100N04S52R8ATMA1 |
| 934066421127 | 100A, 40V, 0.0032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | BUK9E3R2-40E,127 vs 934066421127 |