Part Details for BUK9K18-40E by NXP Semiconductors
Results Overview of BUK9K18-40E by NXP Semiconductors
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BUK9K18-40E Information
BUK9K18-40E by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BUK9K18-40E
BUK9K18-40E CAD Models
BUK9K18-40E Part Data Attributes
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BUK9K18-40E
NXP Semiconductors
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Datasheet
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BUK9K18-40E
NXP Semiconductors
30A, 40V, 0.0095ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, LFPAK56D-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 22 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 124 A | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |