Datasheets
BUZ11 by:

30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for BUZ11 by TT Electronics Power and Hybrid / Semelab Limited

Overview of BUZ11 by TT Electronics Power and Hybrid / Semelab Limited

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Part Details for BUZ11

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BUZ11 Part Data Attributes

BUZ11 TT Electronics Power and Hybrid / Semelab Limited
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BUZ11 TT Electronics Power and Hybrid / Semelab Limited 30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMELAB LTD
Package Description FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for BUZ11

This table gives cross-reference parts and alternative options found for BUZ11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ11 Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors BUZ11 vs BUZ11
BUZ11 Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Motorola Semiconductor Products BUZ11 vs BUZ11
BUZ11S2 30A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics BUZ11 vs BUZ11S2
BUZ11 Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Siemens BUZ11 vs BUZ11
BUZ11 30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ11 vs BUZ11
BUZ11 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Advanced Microelectronic Products Inc BUZ11 vs BUZ11
BUZ11 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Thomson Consumer Electronics BUZ11 vs BUZ11
Part Number Description Manufacturer Compare
IRFZ34N Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG BUZ11 vs IRFZ34N
IRFZ34NPBF Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier BUZ11 vs IRFZ34NPBF
BUZ11 30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUZ11 vs BUZ11
BUK555-60A TRANSISTOR 39 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors BUZ11 vs BUK555-60A
IRFZ34N Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier BUZ11 vs IRFZ34N
BUZ11 Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Siemens BUZ11 vs BUZ11
BUZ11 Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Vishay Siliconix BUZ11 vs BUZ11
IRFZ34NPBF Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG BUZ11 vs IRFZ34NPBF
BUZ11 Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors BUZ11 vs BUZ11
BUZ11 30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ11 vs BUZ11

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