Part Details for BUZ307 by Siemens
Overview of BUZ307 by Siemens
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUZ307
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 12 |
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RFQ | ||
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Quest Components | 3 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | 312 |
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$1.9800 / $4.9500 | Buy Now |
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ComSIT USA | N-CHANNEL ENHANCEMENT IGBT TO-218 Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 RoHS: Not Compliant | Europe - 475 |
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RFQ |
Part Details for BUZ307
BUZ307 CAD Models
BUZ307 Part Data Attributes:
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BUZ307
Siemens
Buy Now
Datasheet
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Compare Parts:
BUZ307
Siemens
Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 55 pF | |
JEDEC-95 Code | TO-218 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 75 W | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 220 ns | |
Turn-on Time-Max (ton) | 105 ns |
Alternate Parts for BUZ307
This table gives cross-reference parts and alternative options found for BUZ307. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ307, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ307 | 3A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | Rochester Electronics LLC | BUZ307 vs BUZ307 |
BUZ307 | Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Infineon Technologies AG | BUZ307 vs BUZ307 |