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Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 33 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA | 1 |
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$6.4800 | Buy Now |
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Chip 1 Exchange | INSTOCK | 90 |
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RFQ | |
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Chip1Cloud | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | 545 |
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RFQ |
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BUZ341
Siemens
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Datasheet
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BUZ341
Siemens
Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | SIEMENS | |
Avalanche Energy Rating (Eas) | 790 mJ | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 350 pF | |
JEDEC-95 Code | TO-218 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 170 W | |
Power Dissipation-Max (Abs) | 170 W | |
Pulsed Drain Current-Max (IDM) | 132 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 920 ns | |
Turn-on Time-Max (ton) | 230 ns |
This table gives cross-reference parts and alternative options found for BUZ341. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ341, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFP250 | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | BUZ341 vs IRFP250 |
IRFP250N | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | BUZ341 vs IRFP250N |
IRFP250 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | BUZ341 vs IRFP250 |
IRFP250 | 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | BUZ341 vs IRFP250 |
IRFP250 | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | BUZ341 vs IRFP250 |
IRFP250NPBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | BUZ341 vs IRFP250NPBF |
MTW32N20E | 32A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | BUZ341 vs MTW32N20E |
IRFP250PBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Vishay Siliconix | BUZ341 vs IRFP250PBF |