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Transistors Power Field-Effect Transistors BUZ36

BUZ36
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Overview of BUZ36 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for BUZ36 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   4
RFQ

CAD Models for BUZ36 by Infineon Technologies AG
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Part Data Attributes for BUZ36 by Infineon Technologies AG
Parametric Data

BUZ36
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
Drain Current-Max (ID)
22 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
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  1. BUZ36
    Infineon Technologies AG
    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Alternate Parts for BUZ36

This table gives cross-reference parts and alternative options found for BUZ36. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ36, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BUZ36 22A, 200V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUZ36 vs BUZ36
BUZ36 Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Siemens BUZ36 vs BUZ36
Part Number Description Manufacturer Compare
2N6766-JQR-A Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors BUZ36 vs 2N6766-JQR-A
IRF251R 30A, 150V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation BUZ36 vs IRF251R
2N6766-JQR-BR1 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors BUZ36 vs 2N6766-JQR-BR1
2N6766R1 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUZ36 vs 2N6766R1
IRF253 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC BUZ36 vs IRF253
IRF252R Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor BUZ36 vs IRF252R
IRF251 Power Field-Effect Transistor, 30A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, Vishay Siliconix BUZ36 vs IRF251
2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Infineon Technologies AG BUZ36 vs 2N6766
IRF253 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation BUZ36 vs IRF253
2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Motorola Semiconductor Products BUZ36 vs 2N6766

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