Datasheets
BUZ45 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for BUZ45 by Infineon Technologies AG

Overview of BUZ45 by Infineon Technologies AG

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Applications Industrial Automation

Part Details for BUZ45

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BUZ45 Part Data Attributes:

BUZ45 Infineon Technologies AG
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BUZ45 Infineon Technologies AG Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 9.6 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for BUZ45

This table gives cross-reference parts and alternative options found for BUZ45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ45 TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,9.6A I(D),TO-204AA Intersil Corporation BUZ45 vs BUZ45
BUZ45 Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Siemens BUZ45 vs BUZ45
BUZ45 9.6A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics BUZ45 vs BUZ45
BUZ45 9.6A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUZ45 vs BUZ45
BUZ45 Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors BUZ45 vs BUZ45
BUZ45 Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUZ45 vs BUZ45
Part Number Description Manufacturer Compare
BUZ45 Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUZ45 vs BUZ45
BUZ45 9.6A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics BUZ45 vs BUZ45
BUZ45 Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors BUZ45 vs BUZ45
BUZ45 Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Siemens BUZ45 vs BUZ45
BUZ45 9.6A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUZ45 vs BUZ45
BUZ45 TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,9.6A I(D),TO-204AA Intersil Corporation BUZ45 vs BUZ45

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