Part Details for BUZ60 by Infineon Technologies AG
Overview of BUZ60 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BUZ60
BUZ60 CAD Models
BUZ60 Part Data Attributes
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BUZ60
Infineon Technologies AG
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Datasheet
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BUZ60
Infineon Technologies AG
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | SFM | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BUZ60
This table gives cross-reference parts and alternative options found for BUZ60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MTP5N40E | 5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | onsemi | BUZ60 vs MTP5N40E |
IRF730 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | BUZ60 vs IRF730 |
IRF730 | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | BUZ60 vs IRF730 |
IRF730 | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | BUZ60 vs IRF730 |
IRF730 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | BUZ60 vs IRF730 |
IRF730PBF | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | BUZ60 vs IRF730PBF |
BUZ60 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | BUZ60 vs BUZ60 |
MTP5N35 | 5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | BUZ60 vs MTP5N35 |
BUZ60 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Vishay Siliconix | BUZ60 vs BUZ60 |
BUZ60 | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | BUZ60 vs BUZ60 |