Manufacturer | Description | Price Range | Set Alert | Details |
---|---|---|---|---|
Harris Semiconductor | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | $0.5206 / $0.6125 |
|
View Details |
Infineon Technologies AG | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | $0.4958 / $7.5000 |
|
View Details |
Siemens | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | $0.9407 / $3.2720 |
|
View Details |
STMicroelectronics | 3.8A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | $0.9100 / $3.9200 |
|
View Details |
Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
|
View Details | |
North American Philips Discrete Products Div | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
|
View Details | |
Rochester Electronics LLC | 2.6A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
|
View Details | |
Intersil Corporation | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2.6A I(D),TO-220AB |
|
View Details |