-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
MOSFET N-CH 1200V 17.7A TO-247
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
98Y6012
|
Newark | Mosfet, N-Ch, 1.2Kv, 19A, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:19A, Drain Source Voltage Vds:1.2Kv, On Resistance Rds(On):0.16Ohm, Rds(On) Test Voltage Vgs:20V, Threshold Voltage Vgs:2.6V, Power Rohs Compliant: Yes |Wolfspeed C2M0160120D RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 265 |
|
$10.7100 / $12.6000 | Buy Now |
DISTI #
C2M0160120D-ND
|
DigiKey | SICFET N-CH 1200V 19A TO247-3 Min Qty: 1 Lead time: 34 Weeks Container: Tube |
1368 In Stock |
|
$10.9838 / $15.9100 | Buy Now |
DISTI #
941-C2M0160120D
|
Mouser Electronics | SiC MOSFETs SIC MOSFET 1200V RDS ON 160 mOhm RoHS: Compliant | 2471 |
|
$10.2200 / $13.4400 | Buy Now |
|
Bristol Electronics | 10080 |
|
RFQ | ||
|
Bristol Electronics | 3422 |
|
RFQ | ||
DISTI #
C2M0160120D
|
TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 17.7A, 125W, TO247-3 Min Qty: 1 | 41 |
|
$11.3000 / $15.3000 | Buy Now |
DISTI #
C2M0160120D
|
Richardson RFPD | SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 | 170 |
|
$7.5200 / $8.3300 | Buy Now |
DISTI #
C1S815400002709
|
Chip1Stop | MOSFET RoHS: Compliant | 170 |
|
$11.4000 / $17.3000 | Buy Now |
|
LCSC | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | 6 |
|
$9.2284 / $11.1590 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
C2M0160120D
Wolfspeed
Buy Now
Datasheet
|
Compare Parts:
C2M0160120D
Wolfspeed
MOSFET N-CH 1200V 17.7A TO-247
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | WOLFSPEED INC | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | Wolfspeed | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.196 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |