Findchips: c2m1000170j details by Wolfspeed

Results Overview of C2M1000170J by Wolfspeed

Distributor Offerings: (4 listings)
Number of FFF Equivalents: (0 replacements)
CAD Models: (Available)
Number of Functional Equivalents: (3 options)
Part Data Attributes: (Available)
Reference Designs: (Not Available)

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Applications Industrial Automation Energy and Power Systems Renewable Energy Robotics and Drones Motor control systems

C2M1000170J Information

C2M1000170J by Wolfspeed is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part #	Distributor	Description	Stock	Price	Buy
C2M1000170J DISTI # 98Y6014	Newark	Mosfet, N-Ch, 1.7Kv, 5.3A, To-263, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:5.3A, Drain Source Voltage Vds:1.7Kv, No. Of Pins:7Pins, Rds(On) Test Voltage:20V, Power Dissipation:78W Rohs Compliant: Yes \|Wolfspeed C2M1000170J RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk	2918	1 $10.6600 10 $10.2900 25 $10.1500 50 $8.5700 100 $7.5500 250 $7.5400 500 $6.8300	$6.8300 / $10.6600	Buy Now
C2M1000170J DISTI # C2M1000170J	TME	Transistor: N-MOSFET, SiC, unipolar, 1.7kV, 5.3A, 78W, D2PAK-7, 20ns Min Qty: 1	57	1 $10.0300 10 $8.7000 50 $7.4600 100 $7.3600	$7.3600 / $10.0300	Buy Now
C2M1000170J DISTI # C2M1000170J	Chip One Stop	Semiconductors RoHS: Compliant pbFree: No Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube	720	1 $8.4400 10 $8.2800 50 $5.4100 100 $5.4000 200 $5.3900 500 $4.8900	$4.8900 / $8.4400	Buy Now
C2M1000170J	Vyrian	Transistors	1636			RFQ

Part Details for C2M1000170J

C2M1000170J CAD Models

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C2M1000170J Part Data Attributes

Parametric Data

Show differences only	C2M1000170J Wolfspeed Buy Now Datasheet	Buy Now	Compare Parts: C2M1000170J Wolfspeed MOSFET N-CH 1700V 5.3A TO247

Pbfree Code	Yes
Rohs Code	Yes
Part Life Cycle Code	End Of Life
Ihs Manufacturer	WOLFSPEED INC
Reach Compliance Code	not_compliant
ECCN Code	EAR99
Samacsys Manufacturer	Wolfspeed
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	1700 V
Drain Current-Max (ID)	5.3 A
Drain-source On Resistance-Max	1.4 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-G7
JESD-609 Code	e3
Number of Elements	1
Number of Terminals	7
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	245
Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	6 A
Surface Mount	YES
Terminal Finish	Matte Tin (Sn)
Terminal Form	GULL WING
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON CARBIDE

Alternate Parts for C2M1000170J

This table gives cross-reference parts and alternative options found for C2M1000170J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of C2M1000170J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description	Compare
C2M1000170J-TR	Cree, Inc.	Check for Price	Power Field-Effect Transistor, 5.3A I(D), 1700V, 1.4ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, D2PAK-7	C2M1000170J vs C2M1000170J-TR
C2M1000170J	Cree, Inc.	Check for Price	Power Field-Effect Transistor, 5.3A I(D), 1700V, 1.4ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, D2PAK-7	C2M1000170J vs C2M1000170J
SCT2750NYTB	ROHM Semiconductor	$5.3413	Power Field-Effect Transistor,	C2M1000170J vs SCT2750NYTB

C2M1000170J Frequently Asked Questions (FAQ)

A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
Use a gold wire with a diameter of 0.7-1.0 mil (18-25 μm) and a bonding force of 2-5 grams. The bonding temperature should be between 150°C to 180°C. Ensure the bonding area is clean and free of oxidation.
The maximum allowed voltage transient is ±10% of the rated voltage. Exceeding this limit may cause device damage or reduce its lifespan.
Handle the device in an ESD-controlled environment. Use an ESD wrist strap or mat, and ensure all equipment is grounded. Avoid touching the device's pins or exposed die.
A gate drive voltage of 15-20 V and a resistance of 10-20 ohms is recommended. This ensures proper switching and minimizes power losses.

Part Details for C2M1000170J by Wolfspeed

Results Overview of C2M1000170J by Wolfspeed

C2M1000170J Information

Price & Stock for C2M1000170J