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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
81AK3679
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Newark | Sic Mosfet, N-Ch, 1.2Kv, 66A, To-247 Rohs Compliant: Yes |Wolfspeed C3M0040120D Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 32 |
|
$17.5900 / $22.6400 | Buy Now |
DISTI #
1697-C3M0040120D-ND
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DigiKey | 1200V 40MOHM SIC MOSFET Min Qty: 1 Lead time: 30 Weeks Container: Tube |
289 In Stock |
|
$17.9182 / $27.0200 | Buy Now |
DISTI #
941-C3M0040120D
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Mouser Electronics | MOSFET SiC, MOSFET, 40mohm, 1200V, TO-247-3, Industrial RoHS: Compliant | 795 |
|
$19.5900 / $27.0100 | Buy Now |
DISTI #
C3M0040120D
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Richardson RFPD | SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 | 0 |
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$14.3500 / $15.0000 | Buy Now |
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C3M0040120D
Wolfspeed
Buy Now
Datasheet
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Compare Parts:
C3M0040120D
Wolfspeed
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | WOLFSPEED INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Wolfspeed | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 66 A | |
Drain-source On Resistance-Max | 0.0535 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 326 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Reference Standard | IEC-60747-8-4 | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
This table gives cross-reference parts and alternative options found for C3M0040120D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of C3M0040120D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SCTW60N120G2AG | Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package | STMicroelectronics | C3M0040120D vs SCTW60N120G2AG |
MSC040SMA120B | Power Field-Effect Transistor, 66A I(D), 1200V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | C3M0040120D vs MSC040SMA120B |
NTHL040N120SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L, 450-TUBE | onsemi | C3M0040120D vs NTHL040N120SC1 |