Datasheets
C3M0040120D by: Wolfspeed

Power Field-Effect Transistor,

Part Details for C3M0040120D by Wolfspeed

Overview of C3M0040120D by Wolfspeed

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Applications Space Technology Internet of Things (IoT) Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing Communication and Networking

Price & Stock for C3M0040120D

Part # Distributor Description Stock Price Buy
DISTI # 81AK3679
Newark Sic Mosfet, N-Ch, 1.2Kv, 66A, To-247 Rohs Compliant: Yes |Wolfspeed C3M0040120D Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 32
  • 1 $22.6400
  • 5 $21.6300
  • 10 $20.6000
  • 25 $19.5500
  • 50 $18.4300
  • 100 $18.0900
  • 250 $17.5900
$17.5900 / $22.6400 Buy Now
DISTI # 1697-C3M0040120D-ND
DigiKey 1200V 40MOHM SIC MOSFET Min Qty: 1 Lead time: 30 Weeks Container: Tube 289
In Stock
  • 1 $27.0200
  • 30 $22.3977
  • 120 $20.9979
  • 510 $17.9182
$17.9182 / $27.0200 Buy Now
DISTI # 941-C3M0040120D
Mouser Electronics MOSFET SiC, MOSFET, 40mohm, 1200V, TO-247-3, Industrial RoHS: Compliant 795
  • 1 $27.0100
  • 10 $24.0000
  • 30 $22.3900
  • 60 $21.6900
  • 120 $20.9900
  • 270 $19.5900
$19.5900 / $27.0100 Buy Now
DISTI # C3M0040120D
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 0
  • 1 $15.0000
  • 100 $14.3500
$14.3500 / $15.0000 Buy Now

Part Details for C3M0040120D

C3M0040120D CAD Models

C3M0040120D Part Data Attributes

C3M0040120D Wolfspeed
Buy Now Datasheet
Compare Parts:
C3M0040120D Wolfspeed Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer WOLFSPEED INC
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Wolfspeed
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 66 A
Drain-source On Resistance-Max 0.0535 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 326 W
Pulsed Drain Current-Max (IDM) 100 A
Reference Standard IEC-60747-8-4
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for C3M0040120D

This table gives cross-reference parts and alternative options found for C3M0040120D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of C3M0040120D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package STMicroelectronics C3M0040120D vs SCTW60N120G2AG
MSC040SMA120B Power Field-Effect Transistor, 66A I(D), 1200V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc C3M0040120D vs MSC040SMA120B
NTHL040N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L, 450-TUBE onsemi C3M0040120D vs NTHL040N120SC1
Part Number Description Manufacturer Compare
MSC040SMA120B Power Field-Effect Transistor, 66A I(D), 1200V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc C3M0040120D vs MSC040SMA120B
SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package STMicroelectronics C3M0040120D vs SCTW60N120G2AG
NTHL040N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L, 450-TUBE onsemi C3M0040120D vs NTHL040N120SC1

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