Datasheets
CAB530M12BM3 by: Wolfspeed

Power Field-Effect Transistor, 1200V, 0.00355ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-7

Part Details for CAB530M12BM3 by Wolfspeed

Overview of CAB530M12BM3 by Wolfspeed

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Price & Stock for CAB530M12BM3

Part # Distributor Description Stock Price Buy
DISTI # 1697-CAB530M12BM3-ND
DigiKey SIC 2N-CH 1200V 530A MODULE Min Qty: 1 Lead time: 30 Weeks Container: Tray 7
In Stock
  • 1 $945.9100
  • 10 $912.9090
$912.9090 / $945.9100 Buy Now
DISTI # 941-CAB530M12BM3
Mouser Electronics Discrete Semiconductor Modules SiC, Module, 530A, 1200V, 62mm, BM3, Half-Bridge, Industrial RoHS: Not Compliant 5
  • 1 $945.9100
$945.9100 Buy Now
DISTI # CAB530M12BM3
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 0
  • 1 $785.7100
$785.7100 Buy Now

Part Details for CAB530M12BM3

CAB530M12BM3 Part Data Attributes:

CAB530M12BM3 Wolfspeed
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CAB530M12BM3 Wolfspeed Power Field-Effect Transistor, 1200V, 0.00355ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-7
Part Life Cycle Code Active
Ihs Manufacturer WOLFSPEED INC
Package Description MODULE-7
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Wolfspeed
Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain-source On Resistance-Max 0.00355 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 84 pF
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1060 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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