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MOSFET 2N-CH 1200V 404A MODULE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CAS300M12BM2 by Wolfspeed is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98Y6008
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Newark | Mosfet Module, 1.2Kv, Panel, Mosfet Module Configuration:Half Bridge, Channel Type:N Channel, Continuous Drain Current Id:404A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:-, Rds(On) Test Voltage:20V, Power Dissipation:1.66Kw Rohs Compliant: Yes |Wolfspeed CAS300M12BM2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1,183.6200 | Buy Now |
|
Bristol Electronics | 2 |
|
RFQ | ||
DISTI #
CAS300M12BM2
|
TME | Module, transistor/transistor, 1.2kV, 285A, 62MM, screw, Idm: 1.5kA Min Qty: 1 | 0 |
|
$1,030.0000 / $1,140.0000 | RFQ |
DISTI #
CAS300M12BM2
|
Richardson RFPD | SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 | 264 |
|
$772.7300 | Buy Now |
|
Vyrian | Transistors | 95 |
|
RFQ |
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CAS300M12BM2
Wolfspeed
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Datasheet
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CAS300M12BM2
Wolfspeed
MOSFET 2N-CH 1200V 404A MODULE
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | WOLFSPEED INC | |
Package Description | MODULE-7 | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | Wolfspeed | |
Case Connection | ISOLATED | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain-source On Resistance-Max | 0.0567 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 113 pF | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 1500 A | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
The maximum junction temperature of the CAS300M12BM2 is 175°C. Exceeding this temperature can reduce the device's lifespan and affect its performance.
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 5 W/m-K should be used to fill the gap between the device and the heat sink.
The recommended gate drive voltage for the CAS300M12BM2 is between 15V and 20V. This ensures proper switching and minimizes the risk of device damage.
Yes, the CAS300M12BM2 can be used in a parallel configuration to increase the overall current handling capability. However, it is essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
A low-inductance PCB layout is recommended for the CAS300M12BM2. This can be achieved by using a compact layout, minimizing the length of the power traces, and using a solid ground plane to reduce electromagnetic interference (EMI).