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Transistors / Power Field-Effect Transistors / CAS300M12BM2
Datasheets
CAS300M12BM2 by:

MOSFET 2N-CH 1200V 404A MODULE

Part Details for CAS300M12BM2 by Wolfspeed

Results Overview of CAS300M12BM2 by Wolfspeed

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CAS300M12BM2 Information

CAS300M12BM2 by Wolfspeed is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CAS300M12BM2

Part # Distributor Description Stock Price Buy
DISTI # 98Y6008
Newark Mosfet Module, 1.2Kv, Panel, Mosfet Module Configuration:Half Bridge, Channel Type:N Channel, Continuous Drain Current Id:404A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:-, Rds(On) Test Voltage:20V, Power Dissipation:1.66Kw Rohs Compliant: Yes |Wolfspeed CAS300M12BM2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1,183.6200
$1,183.6200 Buy Now
Bristol Electronics   2
RFQ
DISTI # CAS300M12BM2
TME Module, transistor/transistor, 1.2kV, 285A, 62MM, screw, Idm: 1.5kA Min Qty: 1 0
  • 1 $1,140.0000
  • 3 $1,030.0000
$1,030.0000 / $1,140.0000 RFQ
DISTI # CAS300M12BM2
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 268
  • 1 $772.7300
$772.7300 Buy Now
Vyrian Transistors 95
RFQ

Part Details for CAS300M12BM2

CAS300M12BM2 Part Data Attributes

Parametric Data
CAS300M12BM2 Wolfspeed
Buy Now Datasheet
Compare Parts:
CAS300M12BM2 Wolfspeed MOSFET 2N-CH 1200V 404A MODULE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer WOLFSPEED INC
Package Description MODULE-7
Reach Compliance Code compliant
Samacsys Manufacturer Wolfspeed
Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain-source On Resistance-Max 0.0567 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 113 pF
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1500 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

CAS300M12BM2 Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the CAS300M12BM2 is 175°C. Exceeding this temperature can reduce the device's lifespan and affect its performance.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 5 W/m-K should be used to fill the gap between the device and the heat sink.

  • The recommended gate drive voltage for the CAS300M12BM2 is between 15V and 20V. This ensures proper switching and minimizes the risk of device damage.

  • Yes, the CAS300M12BM2 can be used in a parallel configuration to increase the overall current handling capability. However, it is essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.

  • A low-inductance PCB layout is recommended for the CAS300M12BM2. This can be achieved by using a compact layout, minimizing the length of the power traces, and using a solid ground plane to reduce electromagnetic interference (EMI).

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