Part Details for CLF1G0060-10 by NXP Semiconductors
Overview of CLF1G0060-10 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Industrial Automation
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CLF1G0060-30 | Rochester Electronics LLC | CLF1G0060-30 - 30W Broadband RF power GaN HEMT | |
| CLF1G0060-10 | Rochester Electronics LLC | CLF1G0060-10 - 10W Broadband RF power GaN HEMT | |
| CLF1G0060S-10 | Rochester Electronics LLC | CLF1G0060S-10 - 10W Broadband RF power GaN HEMT |
Part Details for CLF1G0060-10
CLF1G0060-10 CAD Models
CLF1G0060-10 Part Data Attributes
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CLF1G0060-10
NXP Semiconductors
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Datasheet
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CLF1G0060-10
NXP Semiconductors
TRANSISTOR RF SMALL SIGNAL, FET, FET RF Small Signal
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 150 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | C BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 250 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM NITRIDE |