Part Details for CM100TU-12F by Mitsubishi Electric
Overview of CM100TU-12F by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CM100TU-12F
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
20M0991
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Newark | Igbt Module, 600V, 100A, Continuous Collector Current:100A, Collector Emitter Saturation Voltage:2.2V, Power Dissipation:350W, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:600V Rohs Compliant: No |Mitsubishi Electric CM100TU-12F RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for CM100TU-12F
CM100TU-12F CAD Models
CM100TU-12F Part Data Attributes
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CM100TU-12F
Mitsubishi Electric
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Datasheet
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CM100TU-12F
Mitsubishi Electric
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | FLANGE MOUNT, R-XUFM-X17 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RTC | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X17 | |
| Number of Elements | 6 | |
| Number of Terminals | 17 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 350 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.2 V |
Alternate Parts for CM100TU-12F
This table gives cross-reference parts and alternative options found for CM100TU-12F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM100TU-12F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CM100TF-12H | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | CM100TU-12F vs CM100TF-12H |
| CM100TU-12F | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | CM100TU-12F vs CM100TU-12F |
| BSM100GD60DLCBOSA1 | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN | Infineon Technologies AG | CM100TU-12F vs BSM100GD60DLCBOSA1 |
| MG100J6ES91 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM100TU-12F vs MG100J6ES91 |
| BSM100GD60DLC | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ECONO3, 39 PIN | Infineon Technologies AG | CM100TU-12F vs BSM100GD60DLC |
| CM100TF-12H | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | CM100TU-12F vs CM100TF-12H |