Part Details for CM200DY-13T by Mitsubishi Electric
Overview of CM200DY-13T by Mitsubishi Electric
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for CM200DY-13T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
71AC0265
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Newark | Igbt Module T-Series Standard Type Dual |Mitsubishi Electric CM200DY-13T Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
DISTI #
917-CM200DY-13T
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Mouser Electronics | IGBT Modules IGBT MODULE T-SERIES STANDARD TYPE DUAL RoHS: Compliant | 20 |
|
$76.6400 / $94.9300 | Buy Now |
|
DISTI #
CM200DY-13T
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 10 | 0 |
|
$75.5900 / $79.5700 | Buy Now |
Part Details for CM200DY-13T
CM200DY-13T CAD Models
CM200DY-13T Part Data Attributes:
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CM200DY-13T
Mitsubishi Electric
Buy Now
Datasheet
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Compare Parts:
CM200DY-13T
Mitsubishi Electric
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 400 ns | |
| Gate-Emitter Thr Voltage-Max | 6.6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1400 W | |
| Reference Standard | UL RECOGNIZED | |
| Rise Time-Max (tr) | 200 ns | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 800 ns | |
| Turn-on Time-Max (ton) | 600 ns | |
| VCEsat-Max | 1.7 V |
Alternate Parts for CM200DY-13T
This table gives cross-reference parts and alternative options found for CM200DY-13T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM200DY-13T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CM200HA-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | CM200DY-13T vs CM200HA-24H |
| 2MBI150S-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | CM200DY-13T vs 2MBI150S-120 |
| CM200DU-24F | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | CM200DY-13T vs CM200DU-24F |
| CM200HA-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Powerex Power Semiconductors | CM200DY-13T vs CM200HA-24H |
| CM200DY-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | CM200DY-13T vs CM200DY-24H |
| 2MBI200NB-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | CM200DY-13T vs 2MBI200NB-120 |
| MG200Q2YS1 | TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM200DY-13T vs MG200Q2YS1 |
| 1MBI200NA-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M130, 5 PIN | Fuji Electric Co Ltd | CM200DY-13T vs 1MBI200NA-120 |
| 2MBI200LB-060 | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | CM200DY-13T vs 2MBI200LB-060 |
| 2MBI150U4H-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | CM200DY-13T vs 2MBI150U4H-120 |