Part Details for CM450DX-24S1 by Mitsubishi Electric
Overview of CM450DX-24S1 by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Aerospace and Defense
Communication and Networking
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 7024S17J8 | Renesas Electronics Corporation | 4K x 16 Dual-Port RAM | |
| 71024S12TYG | Renesas Electronics Corporation | 5.0V 128K x 8 Asynchronous Static RAM with Corner Power & Ground Pinout | |
| 71024S15TYGI | Renesas Electronics Corporation | 5.0V 128K x 8 Asynchronous Static RAM with Corner Power & Ground Pinout |
Price & Stock for CM450DX-24S1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
99W3050
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Newark | Igbt, Module, N Channel, 1.2Kv, 450A, Continuous Collector Current:450A, Collector Emitter Saturation Voltage:1.8V, Power Dissipation:2.775Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:1.2Kvrohs Compliant: Yes |Mitsubishi Electric CM450DX-24S1 RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for CM450DX-24S1
CM450DX-24S1 CAD Models
CM450DX-24S1 Part Data Attributes
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CM450DX-24S1
Mitsubishi Electric
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Datasheet
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CM450DX-24S1
Mitsubishi Electric
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | MODULE-11 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 450 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Fall Time-Max (tf) | 300 ns | |
| Gate-Emitter Thr Voltage-Max | 6.6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X11 | |
| JESD-609 Code | e3 | |
| Number of Elements | 2 | |
| Number of Terminals | 11 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2775 W | |
| Reference Standard | UL RECOGNIZED | |
| Rise Time-Max (tr) | 200 ns | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 900 ns | |
| Turn-on Time-Max (ton) | 1000 ns | |
| VCEsat-Max | 2.25 V |