Datasheets
CM450DX-24T1 by: Mitsubishi Electric

Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Part Details for CM450DX-24T1 by Mitsubishi Electric

Overview of CM450DX-24T1 by Mitsubishi Electric

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Applications Education and Research Aerospace and Defense Communication and Networking

Available Datasheets

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Price & Stock for CM450DX-24T1

Part # Distributor Description Stock Price Buy
DISTI # 71AC0304
Newark Igbt Module T1-Series Nx Type Dual |Mitsubishi Electric CM450DX-24T1 RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 10 $82.2400
  • 25 $81.0900
  • 50 $79.8700
  • 100 $75.0400
$75.0400 / $82.2400 Buy Now
DISTI # 917-CM450DX-24T1
Mouser Electronics IGBT Modules IGBT MODULE T1-SERIES NX TYPE DUAL RoHS: Compliant 0
  • 12 $106.9800
  • 24 $103.0700
  • 60 $99.9400
$99.9400 / $106.9800 Order Now

Part Details for CM450DX-24T1

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CM450DX-24T1 Part Data Attributes

CM450DX-24T1 Mitsubishi Electric
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CM450DX-24T1 Mitsubishi Electric Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-PUFM-X11
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 450 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Fall Time-Max (tf) 400 ns
Gate-Emitter Thr Voltage-Max 6.6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X11
JESD-609 Code e3
Number of Elements 2
Number of Terminals 11
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1700 W
Reference Standard UL RECOGNIZED
Rise Time-Max (tr) 200 ns
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 1200 ns
Turn-on Time-Max (ton) 800 ns
VCEsat-Max 2.3 V

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