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Transistors / Small Signal Field-Effect Transistors / CSD13385F5
Datasheets
CSD13385F5 by: Texas Instruments

12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection 3-PICOSTAR -55 to 150

Part Details for CSD13385F5 by Texas Instruments

Results Overview of CSD13385F5 by Texas Instruments

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CSD13385F5 Information

CSD13385F5 by Texas Instruments is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for CSD13385F5

Part # Distributor Description Stock Price Buy
DISTI # CSD13385F5
TME Transistor: N-MOSFET, unipolar, 12V, 7.1A, Idm: 41A, 1.4W, PICOSTAR3 Min Qty: 1 1000
  • 1 $0.3690
  • 10 $0.2530
  • 25 $0.2080
  • 100 $0.1690
  • 250 $0.1270
  • 500 $0.1130
  • 1,000 $0.1050
  • 3,000 $0.0950
$0.0950 / $0.3690 Buy Now
Ameya Holding Limited   52083
RFQ
Chip Stock   4000
RFQ
DISTI # C1S746204134447
Chip1Stop Trans MOSFET N-CH 12V 7.1A 3-Pin PicoStar T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 2850
  • 5 $0.4110
  • 50 $0.2520
  • 100 $0.1610
  • 200 $0.1600
  • 500 $0.1210
  • 1,000 $0.0972
  • 2,000 $0.0965
$0.0965 / $0.4110 Buy Now
LCSC 12V 4.3A 15m4.5V0.9A 500mW 800mV250uA 1 N-channel PicoStar-3 MOSFETs ROHS 1822
  • 5 $0.1462
  • 50 $0.1275
  • 150 $0.1195
  • 500 $0.1095
  • 3,000 $0.0964
  • 6,000 $0.0937
$0.0937 / $0.1462 Buy Now

Part Details for CSD13385F5

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CSD13385F5 Part Data Attributes

Parametric Data
CSD13385F5 Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD13385F5 Texas Instruments 12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Date Of Intro 2016-10-29
Samacsys Manufacturer Texas Instruments
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 7.1 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 38 pF
JESD-30 Code R-XBCC-N3
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.4 W
Pulsed Drain Current-Max (IDM) 41 A
Surface Mount YES
Terminal Finish NICKEL GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Resources and Additional Insights for CSD13385F5

Reference Designs related to CSD13385F5

  • Low-power option for smart meter wireless module using primary cells reference design
    This reference design showcases three different power architectures for smart flow meters with lithium manganese dioxide (LiMnO2) primary batteries and commercial off-the-shelf narrowband modules for Internet of Things (IoT)-related applications. The three power solutions are combined with the Battery and System Health Monitoring of Battery Powered Smart Flow Meters Reference Design hardware: which provides highly-accurate State-of-Health (SOH) calculation for the battery lifetime. The always-on in-system current monitoring detects the current peak of the RF transmission and the SOH measurement is scheduled afterwards with an adjustable delay.  High-efficiency power architectures for supplying narrowband cellular modules for IoT-related applications with the BQ35100 battery gauge delivers real-time battery life data enabling on-demand battery replacement.

CSD13385F5 Related Parts

CSD13385F5 Frequently Asked Questions (FAQ)

  • A good PCB layout for the CSD13385F5 involves keeping the analog and digital grounds separate, using a solid ground plane, and minimizing the length of the traces connected to the device's pins. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.

  • To optimize the POR circuit, ensure that the power supply voltage (VDD) rises slowly and monotonically during power-up. A recommended POR circuit includes a voltage detector with a threshold voltage of around 1.8V, and a capacitor (e.g., 10nF) connected between the VDD pin and the voltage detector input.

  • The recommended clock frequency for the CSD13385F5 is between 10MHz and 40MHz. A higher clock frequency can improve the device's performance, but it also increases power consumption. A lower clock frequency can reduce power consumption, but it may affect the device's accuracy and response time.

  • The IVR output voltage (VREG) is internally regulated to 1.8V. To ensure proper operation, connect a 1uF capacitor between the VREG pin and the analog ground (AGND) pin. Additionally, ensure that the input voltage (VIN) is within the recommended range of 2.7V to 5.5V.

  • To minimize EMI and ensure EMC, use a shielded enclosure, keep the device away from high-frequency sources, and use a common-mode choke or ferrite bead on the power supply lines. Additionally, ensure that the PCB layout is optimized for minimal radiation and that the device is properly grounded.

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