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25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26AJ5565
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Newark | Fet, N Ch, Single, 25V, 8Son, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:25V, On Resistance Rds(On):0.0013Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.5V, Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD16401Q5 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 166 |
|
$2.2900 / $2.9500 | Buy Now |
DISTI #
296-24525-1-ND
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DigiKey | MOSFET N-CH 25V 38A/100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5449 In Stock |
|
$1.0634 / $2.5300 | Buy Now |
DISTI #
595-CSD16401Q5
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Mouser Electronics | MOSFET N-Ch NexFET Power MOSFETs RoHS: Compliant | 4565 |
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$1.0800 / $2.3900 | Buy Now |
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Bristol Electronics | 3413 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 38A I(D), 25V, 0.0023OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1140 |
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$1.2263 / $3.2700 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 25V 100A 8-SON | 14814 |
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RFQ | |
DISTI #
3125015
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element14 Asia-Pacific | FET, N CH, SINGLE, 25V, 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape | 166 |
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$1.2476 / $2.1209 | Buy Now |
DISTI #
3125015RL
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element14 Asia-Pacific | FET, N CH, SINGLE, 25V, 8SON RoHS: Compliant Min Qty: 100 Container: Reel | 166 |
|
$1.2476 / $1.5779 | Buy Now |
DISTI #
3125015
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Farnell | FET, N CH, SINGLE, 25V, 8SON RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Cut Tape | 166 |
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$1.1814 / $2.8223 | Buy Now |
DISTI #
3125015RL
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Farnell | FET, N CH, SINGLE, 25V, 8SON RoHS: Compliant Min Qty: 100 Lead time: 40 Weeks, 1 Days Container: Reel | 166 |
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$1.1814 / $1.5110 | Buy Now |
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|
CSD16401Q5
Texas Instruments
Buy Now
Datasheet
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CSD16401Q5
Texas Instruments
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150
|
Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 261 A | |
Drain-source On Resistance-Max | 0.0023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 230 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.1 W | |
Pulsed Drain Current-Max (IDM) | 240 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD16401Q5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD16401Q5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFH5250DTRPBF | Power Field-Effect Transistor, 40A I(D), 25V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | Infineon Technologies AG | CSD16401Q5 vs IRFH5250DTRPBF |
IRFH5250DTR2PBF | Power Field-Effect Transistor, 40A I(D), 25V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | CSD16401Q5 vs IRFH5250DTR2PBF |
IRFH5250DTRPBF | Power Field-Effect Transistor, 40A I(D), 25V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | CSD16401Q5 vs IRFH5250DTRPBF |