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Part Details for CSD16412Q5A by Texas Instruments
Overview of CSD16412Q5A by Texas Instruments
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CSD16412Q5A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-24256-1-ND
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DigiKey | MOSFET N-CH 25V 14A/52A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3520 In Stock |
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$0.3025 / $0.9200 | Buy Now |
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DISTI #
595-CSD16412Q5A
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Mouser Electronics | MOSFET N-Ch NexFET Power MOSFETs RoHS: Compliant | 3785 |
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$0.3020 / $0.9200 | Buy Now |
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Quest Components | 77 |
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$0.8295 / $1.6590 | Buy Now | |
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Ameya Holding Limited | CSD16412Q5A , N沟道 MOSFET 晶体管, 52 A, Vds=25 V, 8针 SON封装 | 8719 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 25V 52A 8-SON / Trans MOSFET N-CH 25V 14A 8-Pin VSONP EP T/R | 12000 |
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RFQ |
Part Details for CSD16412Q5A
CSD16412Q5A CAD Models
CSD16412Q5A Part Data Attributes
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CSD16412Q5A
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD16412Q5A
Texas Instruments
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 16 mOhm 8-VSONP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | SON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 14 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 42 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 91 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
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