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Part Details for CSD17308Q3 by Texas Instruments
Results Overview of CSD17308Q3 by Texas Instruments
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD17308Q3 Information
CSD17308Q3 by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CSD17308Q3T | Texas Instruments | 30V, N ch NexFET MOSFET™, single SON3x3, 11.8mOhm 8-VSON-CLIP -55 to 150 | |
| CSD17308Q3 | Texas Instruments | 30V, N ch NexFET MOSFET™, single SON3x3, 11.8mOhm 8-VSON-CLIP -55 to 150 |
Price & Stock for CSD17308Q3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AH0975
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Newark | Mosfet, N Ch, 30V, 47A, 8Son, Transistor Polarity:N Channel, Continuous Drain Current Id:47A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0094Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.3V, Power Dissipationrohs Compliant: Yes |Texas Instruments CSD17308Q3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 42 |
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$0.7090 / $0.9570 | Buy Now |
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Bristol Electronics | 3943 |
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RFQ | ||
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Bristol Electronics | 2095 |
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RFQ | ||
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Bristol Electronics | 533 |
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RFQ | ||
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Bristol Electronics | Min Qty: 4 | 44 |
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$0.9750 / $1.5000 | Buy Now |
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DISTI #
CSD17308Q3
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TME | Transistor: N-MOSFET, unipolar, 30V, 50A, Idm: 167A, 2.7W, 3.3x3.3mm Min Qty: 1 | 387 |
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$0.3210 / $0.7900 | Buy Now |
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Chip-Germany GmbH | RoHS: Not Compliant | 76 |
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RFQ | |
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CHIPMALL.COM LIMITED | 30V 10.3m@8V,10A 2.7W 1.8V@250uA 1 N-Channel VSON-CLIP-83.3x3.3 MOSFETs ROHS | 3513 |
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$0.3060 / $0.3595 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 50 |
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$0.5000 / $0.7700 | Buy Now |
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LCSC | 30V 10.3m8V10A 2.7W 1.8V250uA 1 N-channel VSON-CLIP-8(3.3x3.3) MOSFETs ROHS | 3538 |
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$0.3483 / $0.6501 | Buy Now |
Part Details for CSD17308Q3
CSD17308Q3 CAD Models
CSD17308Q3 Part Data Attributes
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CSD17308Q3
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD17308Q3
Texas Instruments
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm 8-VSON-CLIP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | SON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 65 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0165 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 35 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 78 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD17308Q3
This table gives cross-reference parts and alternative options found for CSD17308Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17308Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD17308Q3T | Texas Instruments | $0.4086 | 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm 8-VSON-CLIP -55 to 150 | CSD17308Q3 vs CSD17308Q3T |
| PHD36N03LT | NXP Semiconductors | Check for Price | 43.4A, 30V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | CSD17308Q3 vs PHD36N03LT |
| PHD36N03LT | Nexperia | Check for Price | Power Field-Effect Transistor | CSD17308Q3 vs PHD36N03LT |
| PHD36N03LT,118 | Nexperia | Check for Price | N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin | CSD17308Q3 vs PHD36N03LT,118 |
Resources and Additional Insights for CSD17308Q3
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