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Part Details for CSD17570Q5BT by Texas Instruments
Overview of CSD17570Q5BT by Texas Instruments
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CSD17570Q5BT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-48902-1-ND
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DigiKey | MOSFET N-CH 30V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
973 In Stock |
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$1.2204 / $2.8100 | Buy Now |
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DISTI #
595-CSD17570Q5BT
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Mouser Electronics | MOSFET 30V N-Ch Pwr MOSFET RoHS: Compliant | 0 |
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$1.1500 / $2.8100 | Order Now |
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Rochester Electronics | CSD17570Q5B 30V, N ch NexFET MOSFET, single SON5x6, 0.92mOhm RoHS: Not Compliant Status: Active Min Qty: 1 | 24 |
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$1.1700 / $1.3800 | Buy Now |
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DISTI #
CSD17570Q5BT
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TME | Transistor: N-MOSFET, unipolar, 30V, 100A, VSON-CLIP8, 5x6mm Min Qty: 1 | 0 |
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$1.8000 / $2.5200 | RFQ |
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Ameya Holding Limited | MOSFET N-CH 30V 100A 8VSON | 895 |
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RFQ |
Part Details for CSD17570Q5BT
CSD17570Q5BT CAD Models
CSD17570Q5BT Part Data Attributes:
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CSD17570Q5BT
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD17570Q5BT
Texas Instruments
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm 8-VSON-CLIP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | SMALL OUTLINE, R-PDSO-N5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.00092 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1140 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.2 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |